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  • 1
    Electronic Resource
    Electronic Resource
    PH3/H2 plasma passivation of metal-organic chemical vapor deposition grown GaAs on Si (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3689-3694 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of PH3/H2 (PH3/H2=10%) plasma passivation of GaAs grown on Si substrate have been investigated in detail. It is observed that both the surface phosphidization and defect hydrogenation can be realized simultaneously with a reduced plasma-induced damage. The optical and electrical properties of GaAs on Si are effectively improved by PH3/H2 plasma exposure due to the passivation of bulk and surface defects-related nonradiative recombination centers by incorporation of hydrogen (H) and phosphorous (P) atoms. As a result, the PH3/H2 plasma exposed GaAs Schottky diodes on Si show an increase in the reverse breakdown voltage by a factor of about 1.6, and the as-passivated GaAs solar cell grown on Si shows an increase in the conversion efficiency from 15.9% to 18.6% compared to that of the as-grown samples. The passivated GaAs devices on Si show outstanding thermal stability, which is probably due to the active participation of both H and P atoms in the PH3/H2 plasma passivation process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288781
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  • 2
    Electronic Resource
    Electronic Resource
    Optical absorption spectra of C70 thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 459-463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both optical transmission spectroscopy and photothermal deflection spectroscopy are used to determine the spectra of C70 thin films over a wide energy range (0.6–6.5 eV). Based on a molecular orbital model, the optical transitions for the C70 thin film are analyzed. The weak absorption spectra of C70 thin films are similar to that of an amorphous semiconductor. The optical energy gap is derived by a Tauc plot as 1.66 eV. The gap region can be described in terms used for amorphous semiconductors, having features such as an Urbach edge and subgap defect absorption, which are interpreted as a broadening due to disorder or impurities. The effects of the deflection medium on the weak absorption spectra of C70 films are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362747
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  • 3
    Electronic Resource
    Electronic Resource
    Beam characteristics of short-pulse radiation with electromagnetic missile effect (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5040-5044 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Beam characteristics such as beamwidth and beam intensity of short-pulse radiation with electromagnetic missile effect, not restricted to the electromagnetic missile, are generally range dependent in pulse propagation. An effective measure to study such beam characteristics is to investigate the local drop rate of the energy pattern in the beam profile and the local decay rate of energy in the pulse beam. It is shown that both the energy decay rate and the energy drop rate are definitely determined by the time–space source parameters so that the beam characteristics can be readily evaluated and properly controlled. Moreover, the underlying relation between the slow decay rate and the energy drop rate are constructed, which shows perfect harmony in achieving slower-energy decay and higher-energy concentration in the beam. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367320
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  • 4
    Electronic Resource
    Electronic Resource
    A remark on fast decay effect in the electromagnetic missile theory (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 893-895 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fast decay effect of energy in electromagnetic (EM) radiation as deduced from the EM missile theory is demonstrated to be unrealistic. The inferences drawn from the EM missile results involving such a fast decay effect must be modified by taking into account the contribution from the band-limited spectrum, which will yield reasonable results. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366273
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  • 5
    Electronic Resource
    Electronic Resource
    Large second harmonic response in ZnO thin films (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 401-403 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The second-order susceptibilities in the ZnO films have been studied systemically. In very thin films, we observe an enhancement of second-order susceptibilities, which is larger than that of single-crystal ZnO. It was also observed that the second-order susceptibilities for ZnO films depend on the thickness but not on the film growth technique used (reactive sputtering or plasma-enhanced chemical vapor deposition). We suggest a mechanism to explain the reduction in the second-order susceptibilities of the thicker films. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1435065
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  • 6
    Electronic Resource
    Electronic Resource
    Raman scattering and thermogravimetric analysis of iodine-doped multiwall carbon nanotubes (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2553-2555 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iodine-doped multiwall carbon nanotubes (I-MWNTs) were characterized by means of Raman scattering and thermogravimetric analysis. The results show that multiwall carbon nanotubes (MWNTs) can be effectively doped by iodine and exchange electrons with iodine. Iodine atoms form charged polyiodide chains inside tubes of different inner diameter, which is similar to the iodine-doped single-wall carbon nanotubes (I-SWNTs), but can not intercalate into the graphene walls of MWNTs. The Raman scattering behavior of I-MWNTs exhibits some differences from that of I-SWNTs and the low-dimensional conductive hydrocarbon-iodine complex "perylene⋅I2.92." © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1468269
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  • 7
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    Photon-assisted tunneling in an asymmetrically coupled triple quantum dot (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-08-09
    Description: The gate-defined quantum dot is regarded as one of the basic structures required for scalable semiconductor quantum processors. Here, we demonstrate a structure that contains three quantum dots scaled in series. The electron number of each dot and the tunnel coupling between them can be tuned conveniently using splitting gates. We tune the quantum dot array asymmetrically such that the tunnel coupling between the right dot and the central dot is much larger than that between the left dot and the central dot. When driven by microwaves, the sidebands of the photon-assisted tunneling process appear not only in the left-to-central dot transition region but also in the left-to-right dot transition region. These sidebands are both attributed to the left-to-central transition for asymmetric coupling. Our result shows that there is a region of a triple quantum dot structure that remains indistinct when studied with a normal two-dimensional charge stability diagram; this will be helpful in future studies of the scalability of quantum dot systems.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 8
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    Structural properties of Ge on SrTiO3 (001) surface and Ge/SrTiO3 interface (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-03-14
    Description: Germanium−perovskite oxide heterostructures have a strong potential for next-generation low-voltage and low-leakage metal-oxide semiconductor field-effect transistors. We investigated the atomic structure and electronic properties of Ge on perfect and defective (001) SrTiO 3 by first-principle calculations. The specific adsorption sites at the initial growth stage and the atomic structure of Ge on the SrTiO 3 (001) substrate have been systematically investigated. The surface grand potential was calculated and compared as a function of the relative chemical potential. The complete surface phase diagram was presented. The energetically favorable interfaces were pointed out among the atomic arrangements of the Ge/SrTiO 3 (001) interfaces. The atomic structure and electronic properties of the intrinsic point defects were calculated and analyzed for the Ge/SrTiO 3 (001) interfaces.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 9
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    Influence of axial self-magnetic field component on arcing behavior of spiral-shaped contacts (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-10-08
    Description: The transverse magnetic field (TMF) contact design is commonly used in vacuum interrupters. When arcing occurs between the TMF contacts, the contact structure can create a self-induced magnetic field that drives the arc to move and rotate on the contact, and thus local overheating and severe erosion can be avoided. However, TMF contacts could also create an axial self-magnetic component, and the influence of this component on the arc behavior has not been considered to date. In this paper, five different types of Cu-Cr spiral-shaped TMF contacts with three different structures are investigated in a demountable vacuum chamber that contains a high-speed charge-coupled device video camera. It was found that the contact structure greatly influenced the arc behavior, especially in terms of arc rotation and the effective contact area, while contacts with the same slot structure but different diameters showed similar arc behavior and arc motion. The magnetic field distribution and the Lorentz force of each of the three different contact structures are simulated, and the axial self-magnetic field was first taken into consideration for investigation of the TMF contact design. It was found that contact designs that have higher axial self-magnetic field components tend to have arc columns with larger diameters and show poorer arc motion and rotation performance in the experiments.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 10
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    Suppression of low-frequency charge noise in gates-defined GaAs quantum dots (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-12-08
    Description: To reduce the charge noise of a modulation-doped GaAs/AlGaAs quantum dot, we have fabricated shallow-etched GaAs/AlGaAs quantum dots using the wet-etching method to study the effects of two-dimensional electron gas (2DEG) underneath the metallic gates. The low-frequency 1/f noise in the Coulomb blockade region of the shallow-etched quantum dot is compared with a non-etched quantum dot on the same wafer. The average values of the gate noise are approximately 0.5 μ eV in the shallow-etched quantum dot and 3 μ eV in the regular quantum dot. Our results show the quantum dot low-frequency charge noise can be suppressed by the removal of the 2DEG underneath the metallic gates, which provides an architecture for noise reduction.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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