Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
88 (2000), S. 3689-3694
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Effects of PH3/H2 (PH3/H2=10%) plasma passivation of GaAs grown on Si substrate have been investigated in detail. It is observed that both the surface phosphidization and defect hydrogenation can be realized simultaneously with a reduced plasma-induced damage. The optical and electrical properties of GaAs on Si are effectively improved by PH3/H2 plasma exposure due to the passivation of bulk and surface defects-related nonradiative recombination centers by incorporation of hydrogen (H) and phosphorous (P) atoms. As a result, the PH3/H2 plasma exposed GaAs Schottky diodes on Si show an increase in the reverse breakdown voltage by a factor of about 1.6, and the as-passivated GaAs solar cell grown on Si shows an increase in the conversion efficiency from 15.9% to 18.6% compared to that of the as-grown samples. The passivated GaAs devices on Si show outstanding thermal stability, which is probably due to the active participation of both H and P atoms in the PH3/H2 plasma passivation process. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1288781
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