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  • 1
    Electronic Resource
    Electronic Resource
    Plane crystalline films of stearic acid and ω-heptadecenoic acid as electron-beam resist (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1134-1135 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plane crystalline films of stearic acid and ω-heptadecenoic acid were formed by annealing evaporated microcrystalline films and evaluated as an electron-beam resist. The stearic acid film showed positive patterns at doses higher than 100 μC/cm2. For the ω-heptadecenoic acid film exposed at a minimum dose of 7 μC/cm2, negative patterns were developed by heating in a vacuum. Positive patterns were also formed at doses higher than 100 μC/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339726
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of epitaxially grown GaAs on Si substrates with III-V compounds intermediate layers by metalorganic chemical vapor deposition (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4578-4582 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs grown on Si substrate with AlP, AlGaP, GaP/GaAs0.5P0.5 superlattice, and GaAs0.5P0.5/GaAs superlattice was investigated by varying the structure of the intermediate layers between GaAs and Si by metalorganic chemical vapor deposition. It was found that (1) the insertion of AlP and AlGaP layers makes the crystallinity and the surface morphology better, (2) PL (photoluminescence) intensity with two superlattice layers is about one order of magnitude stronger than that without these layers, (3) the crack formation in the GaAs surface layer can be avoided by the strained superlattice layers, (4) the PL intensity has a maximum at about 20 nm for each layer thickness in the superlattices, and (5) the PL intensity increases and the carrier concentration decreases while increasing the thickness of the surface GaAs and saturates over 3 μm. The PL intensity of GaAs on Si substrates is about 80% of that grown on GaAs substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335363
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of surface tension of substrate on annealing of evaporated stearic acid film (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3763-3765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stearic acid layers in the form of microcrystalline grains were formed by a vacuum evaporation method on several kinds of substrates. By annealing, the layer of microcrystalline grains was reformed into a plane crystalline film on the hydrophobic surface of plasma-polymerized methane and evaporated gold with water contact angles larger than 30°. However, the crystalline film was not formed on the hydrophilic surface of oxygen plasma-treated plasma-polymerized methane, mica, and glass with water contact angles smaller than 18°.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339240
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  • 4
    Electronic Resource
    Electronic Resource
    Polystyrene thin film formed by synchrotron radiation chemical vapor deposition (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2613-2616 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of polystyrene thin film by the synchrotron radiation chemical vapor-deposition method was investigated using a styrene monomer. Polystyrene film was deposited at the irradiated area and vicinity along the irradiated area on a Si substrate. The deposition rate depended on the monomer gas pressure, substrate temperature, and x-ray wavelength. Polystyrene film at the irradiated area was insoluble in benzene solvent, while that at the unirradiated area was easily dissolved. A patterned film deposition could be successfully performed under an irradiation of synchrotron radiation through a Ni mesh mask. The pattern profile was influenced by the gap length between the Si substrate and mask and a clear pattern was obtained after benzene treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345467
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  • 5
    Electronic Resource
    Electronic Resource
    Wide area near afterglow oxygen radical source used as a polymer resist asher (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1194-1196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An active oxygen plasma of disk shape is used to ash photoresist films with ±5% variation in the uniformity over 15-cm-diam wafers located in a field-free downstream region which we term the near afterglow. In the near afterglow the resist surface is exposed primarily to both an atomic oxygen flux (1018 atoms cm−2 s−1) as well as a flux of 130.6 nm oxygen resonance radiation (10−3 W cm−2 Sr−1). Under these conditions an ashing rate of 1.5 μm/min for OFPR-800 resist is obtained at 100 °C substrate temperature, with an etch activation energy of 1.1 kcal/mol.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105500
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  • 6
    Electronic Resource
    Electronic Resource
    H2 plasma development of X-ray imaged patterns on plasma-polymerized resists (1984)
    Springer
    Plasma chemistry and plasma processing 4 (1984), S. 119-127 
    Details
    ISSN: 1572-8986
    Keywords: X-ray resist ; vacuum lithography ; plasma polymerization ; plasma etching
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract An X-ray imaged pattern on a plasma-polymerized film was successfully developed by H2 plasma etching. Plasma-polymerized MMA and 6FBMA were formed by using an inductively coupled argon flow type reactor. An X-ray imaged pattern on the film was attained through a knife-cut window of a gold plate. The X-ray was generated from a Cu target at 20 kV and main wavelength 1.54 Å. The pattern development was performed using a tubular type reactor with parallel plate electrodes. The quality of plasma-polymerized resists in an X-ray lithography was evaluated by comparing it with the conventional polymer in the dry and wet process, and the minimum dose rate for a visible pattern fabrication was measured to be 4.1 J/cm2 for both resists in H2 plasma etching development.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00647192
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  • 7
    Electronic Resource
    Electronic Resource
    Vacuum lithography—A completely dry lithography using plasma processing (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 261-269 
    Details
    ISSN: 1572-8986
    Keywords: Vacuum lithography ; electron-beam resist ; plasma-polymerized methyl methacrylate (PPMMA) ; plasma etching
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The purpose of this paper is to describe a thoroughly dry lithography using plasma polymerization and plasma etching. The new lithography is named vacuum lithography because all processes are performed at reduced pressures. Resist films were formed in bell-jar-type and argon-flow-type reactors. The controllability of plasma polymerization is discussed with respect to the type of reactor and gas mixture. A pattern was delineated in the resist using an electron beam, and it was developed by plasma etching with a mixture of argon and oxygen. It was found that the quality of the plasma-polymerized resist depends strongly on the polymer structure and on the plasma etching conditions. In this experiment, the recorded values of sensitivity and γ value of plasma-polymerized methyl methacrylate were 700 µC/cm2 and 1, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00568834
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  • 8
    Electronic Resource
    Electronic Resource
    Dry-process recording material by use of photosensitized solid-state reaction of m-phenylenediacrylic acid (1981)
    New York, NY [u.a.] : Wiley-Blackwell
    Journal of Applied Polymer Science 26 (1981), S. 3505-3510 
    Details
    ISSN: 0021-8995
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/app.1981.070261030
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  • 9
    Electronic Resource
    Electronic Resource
    A breakthrough to the plasma deposited dry-developable e-beam resist (1983)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 23 (1983), S. 1043-1046 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: This paper presents the preliminary results of efforts to improve dry processed electron beam resist materials using plasma polymerization coating technology. Three approaches investigated were chemical susceptibility modification, the use of multilayer resist structures, and the effect of grafting reactions.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760231813
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