ISSN:
1572-8986
Keywords:
X-ray resist
;
vacuum lithography
;
plasma polymerization
;
plasma etching
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Technology
Notes:
Abstract An X-ray imaged pattern on a plasma-polymerized film was successfully developed by H2 plasma etching. Plasma-polymerized MMA and 6FBMA were formed by using an inductively coupled argon flow type reactor. An X-ray imaged pattern on the film was attained through a knife-cut window of a gold plate. The X-ray was generated from a Cu target at 20 kV and main wavelength 1.54 Å. The pattern development was performed using a tubular type reactor with parallel plate electrodes. The quality of plasma-polymerized resists in an X-ray lithography was evaluated by comparing it with the conventional polymer in the dry and wet process, and the minimum dose rate for a visible pattern fabrication was measured to be 4.1 J/cm2 for both resists in H2 plasma etching development.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00647192
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