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  • 1
    ISSN: 1751-8369
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geography , Geosciences
    Notes: A new Lower Cretceous lithostratigraphic unit of the Western Barents Shelf, named the Klippfisk Formation, is formally introduced. The formation represents a condensed carbonate succession deposited on platform areas and structural highs, where it consists of limestones and marls, often glauconitic. The limestones may have a nodular appearance, and fossil debris, which are dominated by Inoceramus prisms, may be abundant. The Klippfisk Formation is composed of two members: the Kutling Member defined herein from cores drilled on the Bjarmeland Platform, and the coeval Tordenskjoldberget Member described on Kong Karls Land. The base of the formation is defined by the abrupt decrease in gamma-ray intensity, where the dark shales of the underlying Hekkingen or Agardhfjellet formations are replaced by marls. It is often unconformable. The Klippfisk Formation is of Berriasian to Early Barremian age and appears to be time-transgressive over parts of the Western Barents Shelf (including Kong Karls Land). It passes laterally into the basinal Knurr Formation. On Kongsøya (Kong Karls Land) a thin shale unit, bounded by unconformities, earlier included in the Tordenskjoldberget Member, represents the northernmost extension of the overlying Kolje Formation in the Barents Shelf.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 1592-1592 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A two-dimensional horn imaging array has been demonstrated at 242 and 93 GHz. In this configuration, a dipole is suspended in a pyramidal horn, fabricated by an anisotropic chemical etch technique, on a 1-μm silicon-oxynitride membrane. This approach leaves room for low-frequency lines and processing electronics. Pattern measurements on a 1.45-λ imaging array agree well with theory, show no sidelobes, and a 3-dB beamwidth of 35° and 46° for the E and H planes, respectively. Application areas include a superconducting tunnel-junction receiver for radio astronomy and imaging arrays for real-time electron density mapping in fusion plasmas. Support for this project was provided by DOE contract DE-FG03-86-ER-53225 (subcontracted from U.C.L.A.).
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    International journal of infrared and millimeter waves 16 (1995), S. 1901-1909 
    ISSN: 1572-9559
    Keywords: Grid Amplifier ; Quasioptical Amplifier ; Monolithic Technology
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A 36-element monolithic grid amplifier has been fabricated. The peak gain is 5 dB at 40.8 GHz with a 3-dB bandwidth of 1.4 GHz. The active elements are pairs of heterojunction-bipolar-transistor's (HBT's). The individual transistors in the grid have a maximum oscillation frequency,f max , of 100 GHz. The grid includes base stabilizing capacitors which result in a highly stable grid. This is the first report of a successful monolithic grid amplifier.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    International journal of infrared and millimeter waves 8 (1987), S. 1249-1255 
    ISSN: 1572-9559
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Submillimeter-wave antennas have been fabricated on 1-μm thick silicon-oxynitride membranes. This approach results in better patterns than previous lens-coupled antennas, and eliminates the dielectric loss associated with the substrate lens. Measurements on a wideband log-periodic antenna at 700 GHz, 370 GHz and 167 GHz show no sidelobes and 3-dB beamwidths between 40° and 60°. A linear imaging array has similar patterns at 700 GHz. Possible applications for membrane antennas include wideband superconducting tunnel-junction receivers for radio astronomy and imaging arrays for radiometry and plasma diagnostics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    International journal of infrared and millimeter waves 6 (1985), S. 909-917 
    ISSN: 1572-9559
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A polystyrene cap for a silicon lens has been fabricated by thermal molding. The cap is 0.5mm thick, and it acts as a quarter-wave matching layer at 94GHz. The measured performance from 75GHz to 170GHz agrees with theory. The reflection loss at 94GHz is reduced by 1.5dB. This is an economical way to make a millimeter-wave anti-reflection coating. This makes a monolithic circuit with a gallium-arsenide substrate and a silicon lens much more attractive than before. The total absorption and reflection loss for a linch diameter lens with the cap should be 1.1dB.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    International journal of infrared and millimeter waves 9 (1988), S. 647-654 
    ISSN: 1572-9559
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Loading a two-dimensional grid with active devices offers a means of combining the power of solid-state oscillators in the microwave and millimeter-wave range. The grid structure allows a large number of negative resistance devices to be combined. This approach is attractive because the active devices do not require an external locking signal, and the combining is done in free space. In addition, the loaded grid is a planar structure amenable to monolithic integration. Measurements on a 25-MESFET grid at 9.7 GHz show power-combining and frequencylocking without an external locking signal, with an ERP of 37 W. Experimental far-field patterns agree with theoretical results obtained using reciprocity.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    International journal of infrared and millimeter waves 10 (1989), S. 931-936 
    ISSN: 1572-9559
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract An accurate monolithic power meter has been developed for millimeter-wave applications. The detector is a large-area Bismuth bolometer, integrated on a fused-Quartz substrate. It simply measures the temperature change caused by the absorption of millimeter-wave radiation. The power meter is simple to fabricate, inexpensive, and can be easily calibrated using a low-frequency network. The measured responsivity for a 50Ω bolometer, with an area of 1×1cm, at a bias of 1V. and a video modulation of 100Hz, is 1mV/W. The noise spectrum exhibits a 1/f rolloff till 1KHz, and is limited by the Johnson noise for higher frequencies. The NEP of the detector is 3μWHz−1/2 at a video modulation of 1KHz. It is possible to decrease the current NEP by fabricating bolometers with higher responsivities. Possible application areas are absolute power calibration and localized power density measurements at millimeter and submillimeter wavelengths.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    International journal of infrared and millimeter waves 16 (1995), S. 377-390 
    ISSN: 1572-9559
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract In this paper we introduce a metal mesh evanescent wave coupler that makes use of evanescent wave coupling between a metal mesh and a dielectric plate, as a quasi-optical component for millimeter and submillimeter wavelengths. The transmission properties of this type of couplers have been investigated experimentally and theoretically for both capacitive and inductive metal meshes in the frequency range from 40 GHz to 60 GHz. The transmittance of a capacitive metal mesh evanescent wave coupler can be adjusted more than 70% by changing the spacing between the capacitive mesh and the silicon plate less than 0.15 mm at around 57 GHz.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    International journal of infrared and millimeter waves 9 (1988), S. 1003-1010 
    ISSN: 1572-9559
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Loading a two-dimensional grid with active devices offers a means of combining the power of solid-state oscillators in the microwave and millimeter-wave range. The grid structure allows a large number of negative resistance devices to be combined. This approach is attractive because the active devices do not require an external locking signal, and the combining is done in free space. In addition, the loaded grid is a planar structure amenable to monolithic integration. Measurements on a 25-MESFET grid at 9.7 GHz show power-combining and frequencylocking without an external locking signal, with an ERP of 37 W. Experimental far-field patterns agree with theoretical results obtained using reciprocity.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    International journal of infrared and millimeter waves 12 (1991), S. 1387-1397 
    ISSN: 1572-9559
    Keywords: Planar Circuits ; Adjustable Tuning Elements ; Submillimeter ; SIS
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The Superconductor-Insulator-Superconductor (SIS) tunnel junction is an extremely sensitive heterodyne detector at millimeter and submillimeter wavelengths. The large inherent capacitance associated with this device results in a substantial impedance mismatch with typical antennas and, therefore, requires a tuning circuit for optimum results. At frequencies where waveguide dimensions are realizable, impedance matching can be accomplished by embedding the detector in a waveguide circuit with adjustable waveguide backshorts. At higher frequencies, where waveguide dimensions become prohibitively small, a planar transmission line embedding circuit provides a reasonable alternative. Typically, such planar circuits offer no post-fabrication adjustability, resulting in demanding materials and design requirements. An adjustable planar embedding circuit based on coplanar transmission lines with movable noncontacting shorting elements has been developed. The shorting elements each consist of a thin metallic plate with an optimized arrangement of rectangular holes, placed along the insulated metallic transmission line to provide a periodic variation of the line impedance. A scadel (1–5 GHz) has shown that a large reflection coefficient, |s 11|≥−0.5 dB, can be achieved with these sliding elements. A low frequency tuning circuit incorporating these shorting elements has been tested to demonstrate practical tuning ranges.
    Type of Medium: Electronic Resource
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