Abstract
A 36-element monolithic grid amplifier has been fabricated. The peak gain is 5 dB at 40.8 GHz with a 3-dB bandwidth of 1.4 GHz. The active elements are pairs of heterojunction-bipolar-transistor's (HBT's). The individual transistors in the grid have a maximum oscillation frequency,f max , of 100 GHz. The grid includes base stabilizing capacitors which result in a highly stable grid. This is the first report of a successful monolithic grid amplifier.
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Liu, CM., Sovero, E.A., Ho, W.J. et al. A millimeter-wave monolithic grid amplifier. Int J Infrared Milli Waves 16, 1901–1909 (1995). https://doi.org/10.1007/BF02072546
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DOI: https://doi.org/10.1007/BF02072546