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  • 1
    Electronic Resource
    Electronic Resource
    Observation of lattice relaxation at the GaAsP/GaAs interface beyond the critical thickness by transmission electron microscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4510-4514 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice relaxation at the GaAs1−xPx/GaAs interface is observed using thickness fringe images in transmission electron microscopy. The bending of the equal thickness fringes observed near the interface is explained, assuming that crystal planes are inclined near the interface and that the inclination has a maximum at the interface. The magnitudes of inclination and the thickness of the strained region are estimated for various phosphorous composition and the GaAsP thickness. The lattice relaxation mechanisms for GaAsP on GaAs is described. It is indicated from the thickness fringe observation that the lattice relaxation occurs gradually beyond the critical thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355942
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of epitaxially grown GaAs on Si substrates with III-V compounds intermediate layers by metalorganic chemical vapor deposition (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4578-4582 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs grown on Si substrate with AlP, AlGaP, GaP/GaAs0.5P0.5 superlattice, and GaAs0.5P0.5/GaAs superlattice was investigated by varying the structure of the intermediate layers between GaAs and Si by metalorganic chemical vapor deposition. It was found that (1) the insertion of AlP and AlGaP layers makes the crystallinity and the surface morphology better, (2) PL (photoluminescence) intensity with two superlattice layers is about one order of magnitude stronger than that without these layers, (3) the crack formation in the GaAs surface layer can be avoided by the strained superlattice layers, (4) the PL intensity has a maximum at about 20 nm for each layer thickness in the superlattices, and (5) the PL intensity increases and the carrier concentration decreases while increasing the thickness of the surface GaAs and saturates over 3 μm. The PL intensity of GaAs on Si substrates is about 80% of that grown on GaAs substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335363
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  • 3
    Electronic Resource
    Electronic Resource
    Low etch pit density GaAs on Si grown by metalorganic chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1433-1435 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs was grown on a Si substrate by metalorganic chemical vapor deposition using GaAs/GaAsP strained-layer superlattice (SLS) intermediate layers. The dislocation density decreases at the interface between GaAs and the SLS, but does not decrease in the SLS. When a GaAs/GaAsP SLS is used as the intermediate layer, part of the threading dislocation propagates into the top GaAs layer because of the lattice mismatch of GaAs and SLS. The low etch pit density of (3–5)×105 cm−2 was obtained by using the intermediate layer of a GaAs/GaAsP SLS and an AlAs/GaAs superlattice with thermal cycle annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102489
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  • 4
    Electronic Resource
    Electronic Resource
    Dislocation reduction in the annealed undercut GaAs on Si (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1480-1482 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dislocations in the undercut GaAs on Si (UCGAS) was investigated by the cross-sectional transmission electron microscope. The UCGAS structure was fabricated by first growing Al0.7Ga0.3As and GaAs on Si substrate and then partially etching the Al0.7Ga0.3As layer in the lateral direction. No dislocation was found in the annealed UCGAS at 800 °C for 10 min, while dislocations were observed in the region where the GaAs layer was connected to the Si substrate. The dislocation reduction mechanism in the UCGAS was also discussed in this letter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107277
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  • 5
    Electronic Resource
    Electronic Resource
    Dislocation generation mechanisms for GaP on Si grown by metalorganic chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2543-2545 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dislocation generation mechanisms for GaP on Si substrates by metalorganic chemical vapor deposition are described. Dislocations are not observed at the GaP/Si interface when the layer thickness is less than 90 nm. The presented high resolution transmission electron microscopy shows two kinds of dislocations with the extra-half plane in the GaP layer and Si substrate. These observations predict that the misfit dislocations are formed at the growth temperature while the dislocations with the extra-half plane in the GaP layer are formed during the cooling process, owing to the difference of the thermal expansion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110427
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