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  • 1
    Electronic Resource
    Electronic Resource
    Observation of lattice relaxation at the GaAsP/GaAs interface beyond the critical thickness by transmission electron microscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4510-4514 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice relaxation at the GaAs1−xPx/GaAs interface is observed using thickness fringe images in transmission electron microscopy. The bending of the equal thickness fringes observed near the interface is explained, assuming that crystal planes are inclined near the interface and that the inclination has a maximum at the interface. The magnitudes of inclination and the thickness of the strained region are estimated for various phosphorous composition and the GaAsP thickness. The lattice relaxation mechanisms for GaAsP on GaAs is described. It is indicated from the thickness fringe observation that the lattice relaxation occurs gradually beyond the critical thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355942
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Low etch pit density GaAs on Si grown by metalorganic chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1433-1435 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs was grown on a Si substrate by metalorganic chemical vapor deposition using GaAs/GaAsP strained-layer superlattice (SLS) intermediate layers. The dislocation density decreases at the interface between GaAs and the SLS, but does not decrease in the SLS. When a GaAs/GaAsP SLS is used as the intermediate layer, part of the threading dislocation propagates into the top GaAs layer because of the lattice mismatch of GaAs and SLS. The low etch pit density of (3–5)×105 cm−2 was obtained by using the intermediate layer of a GaAs/GaAsP SLS and an AlAs/GaAs superlattice with thermal cycle annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102489
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  • 3
    Electronic Resource
    Electronic Resource
    Dislocation generation mechanisms for GaP on Si grown by metalorganic chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2543-2545 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dislocation generation mechanisms for GaP on Si substrates by metalorganic chemical vapor deposition are described. Dislocations are not observed at the GaP/Si interface when the layer thickness is less than 90 nm. The presented high resolution transmission electron microscopy shows two kinds of dislocations with the extra-half plane in the GaP layer and Si substrate. These observations predict that the misfit dislocations are formed at the growth temperature while the dislocations with the extra-half plane in the GaP layer are formed during the cooling process, owing to the difference of the thermal expansion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110427
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    Paper (German National Licenses)
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