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Dislocation reduction in the annealed undercut GaAs on Si (1992)

Sakai, Shiro ; Shao, Chun Lin ; Wada, Naoki ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 1480-1482

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The dislocations in the undercut GaAs on Si (UCGAS) was investigated by the cross-sectional transmission electron microscope. The UCGAS structure was fabricated by first growing Al0.7Ga0.3As and GaAs on Si substrate and then partially etching the Al0.7Ga0.3As layer in the lateral direction. No dislocation was found in the annealed UCGAS at 800 °C for 10 min, while dislocations were observed in the region where the GaAs layer was connected to the Si substrate. The dislocation reduction mechanism in the UCGAS was also discussed in this letter.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.107277

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