ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
The effect of In and Ga coimplanted with C into GaAs on the concentration of CAs has been investigated by local vibrational mode spectroscopy, Rutherford backscattering, particle-induced x-ray emission, and Hall effect. The dose of the C was fixed at 5×1014 cm−2, 27 keV, while the doses of either In, 185 keV, or Ga, 160 keV, ranged from 5×1013 to 5×1015 cm−2. Based on the Hall-effect and local vibrational mode data, 99% of the C, when implanted alone and annealed, is not located as isolated, substitutional atoms on either sublattice, but in an inactive complex. The coimplanted group-III species acts to increase both the concentration of CAs ([CAs]) and the sheet hole concentration. For coimplant doses of 5×1013 and 5×1014 cm−2, these values are in good agreement. Increasing the dose of the group-III coimplanted ion to 5×1015 cm−2 results in a hole concentration that is 45% less than the [CAs] and the coimplanted ions begin to occupy nonsubstitutional sites. The reduction in the concentration of holes due to CAs at the highest dose of coimplanted ion appears to be caused by a compensating defect which limits the maximum sheet hole concentration obtainable by the coimplantation technique in GaAs.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.356061
