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  • 1
    Digitale Medien
    Digitale Medien
    Formation of diluted III–V nitride thin films by N ion implantation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2227-2234 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Diluted III–Nx–V1−x alloys were successfully synthesized by nitrogen implantation into GaAs, InP, and AlyGa1−yAs. In all three cases the fundamental band-gap energy for the ion beam synthesized III–Nx–V1−x alloys was found to decrease with increasing N implantation dose in a manner similar to that observed in epitaxially grown GaNxAs1−x and InNxP1−x alloys. In GaNxAs1−x the highest value of x (fraction of "active" substitutional N on As sublattice) achieved was 0.006. It was observed that NAs is thermally unstable at temperatures higher than 850 °C. The highest value of x achieved in InNxP1−x was higher, 0.012, and the NP was found to be stable to at least 850 °C. In addition, the N activation efficiency in implanted InNxP1−x was at least a factor of 2 higher than that in GaNxAs1−x under similar processing conditions. AlyGa1−yNxAs1−x had not been made previously by epitaxial techniques. N implantation was successful in producing AlyGa1−yNxAs1−x alloys. Notably, the band gap of these alloys remains direct, even above the value of y (y〉0.44) where the band gap of the host material is indirect. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1388860
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  • 2
    Digitale Medien
    Digitale Medien
    Direct measurement of CAs in group III+C coimplanted GaAs (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3829-3834 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effect of In and Ga coimplanted with C into GaAs on the concentration of CAs has been investigated by local vibrational mode spectroscopy, Rutherford backscattering, particle-induced x-ray emission, and Hall effect. The dose of the C was fixed at 5×1014 cm−2, 27 keV, while the doses of either In, 185 keV, or Ga, 160 keV, ranged from 5×1013 to 5×1015 cm−2. Based on the Hall-effect and local vibrational mode data, 99% of the C, when implanted alone and annealed, is not located as isolated, substitutional atoms on either sublattice, but in an inactive complex. The coimplanted group-III species acts to increase both the concentration of CAs ([CAs]) and the sheet hole concentration. For coimplant doses of 5×1013 and 5×1014 cm−2, these values are in good agreement. Increasing the dose of the group-III coimplanted ion to 5×1015 cm−2 results in a hole concentration that is 45% less than the [CAs] and the coimplanted ions begin to occupy nonsubstitutional sites. The reduction in the concentration of holes due to CAs at the highest dose of coimplanted ion appears to be caused by a compensating defect which limits the maximum sheet hole concentration obtainable by the coimplantation technique in GaAs.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356061
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  • 3
    Digitale Medien
    Digitale Medien
    Novel metal ion surface modification technique (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1392-1394 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We describe a method for applying metal ions to the near-surface region of solid materials. The added species can be energetically implanted below the surface or built up as a surface film with an atomically mixed interface with the substrate; the metal ion species can be the same as the substrate species or different from it, and more than one kind of metal species can be applied, either simultaneously or sequentially. Surface structures can be fabricated, including coatings and thin films of single metals, tailored alloys, or metallic multilayers, and they can be implanted or added onto the surface and ion beam mixed. We report two simple demonstrations of the method: implantation of yttrium into a silicon substrate at a mean energy of 70 keV and a dose of 1×1016 atoms/cm2, and the formation of a titanium-yttrium multilayer structure with ion beam mixing to the substrate.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104318
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  • 4
    Digitale Medien
    Digitale Medien
    Cross-section transmission electron microscopy study of carbon-implanted layers in silicon (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 798-800 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have used cross-section transmission electron microscopy (XTEM) to study microstructures of carbon-implanted silicon layers after high-temperature annealing. It was found that the threshold dose for extended defect formation was much higher for carbon implantation than for other ion species such as B, P, and O. In 2.4 MeV carbon-implanted layers, no dislocations were formed for doses as high as 2×1016 cm−2 after annealing at 1000 °C for 1 h. The threshold was found to be lower for low-energy implantation (100 keV): at a dose of 2×1016 cm−2, when an amorphous layer was formed, microtwins were formed near the projected range upon annealing. Microprecipitates around 50 A(ring) in size were observed in low-energy carbon-implanted samples and the precipitates appeared to be under strain.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.103424
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  • 5
    Digitale Medien
    Digitale Medien
    Breakdown of crystallinity in low-temperature-grown GaAs layers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2153-2155 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A systematic study of the change in structural quality of as-grown GaAs layers deposited at temperatures between 180 and 210 °C by molecular beam epitaxy was performed using transmission electron microscopy, double-crystal x-ray rocking curves, and particle-induced x-ray emission. We found that the crystal quality was correlated strongly with growth temperature near 200 °C. The lattice parameter and the amount of As incorporated in the layer were observed to increase at lower growth temperatures. After exceeding a certain growth-temperature-dependent layer thickness, large densities of pyramidal-type defects are formed, which at lowest growth temperature result in the breakdown of crystallinity and in columnar polycrystalline growth. The lattice expansion is ascribed to the excess As in the layers. The mechanisms of breakdown of crystallinity are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104990
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  • 6
    Digitale Medien
    Digitale Medien
    Analysis of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures by secondary-ion mass spectrometry and ion channeling (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1305-1307 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Secondary-ion mass spectrometry has been used to analyze the Al and In depth profiles in pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures. Surface segregation of In was found on the upper interface of the strained InGaAs layer under a moderate growth temperature of 510 °C. The segregation effect was found to be suppressed when the As4 overpressure was doubled. Ion channeling measurements are capable of differentiating the coherency of the strained InGaAs layer in the samples studied. A correlation was found between the coherency of the layer and its electrical transport property.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104344
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  • 7
    Digitale Medien
    Digitale Medien
    Synthesis of GaN nanocrystals by sequential ion implantation (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2268-2270 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have synthesized GaN nanocrystals by sequential implantation of Ga and N ions into a sapphire substrate followed by a postimplantation anneal. The nanocrystals have been identified as the wurtzite phase α-GaN structure by transmission electron microscopy. We also found that the nanocrystals are aligned with the sapphire following the relationship: (0001)sapphire(parallel)(0001)GaN and (112¯0)sapphire(parallel)(112¯0)GaN. The use of a sapphire substrate allows for the measurements of optical properties, and near band-edge luminescence and the yellow band are observed in photoluminescence spectroscopy.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.118850
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  • 8
    Digitale Medien
    Digitale Medien
    Growth studies of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2022-2024 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Strained GaAs/InGaAs/AlGaAs quantum well structures have been grown by molecular beam epitaxy at substrate temperatures from 375 to 510 °C. The well layer thickness and In composition are analyzed by ion channeling and particle-induced x-ray emission as a function of growth temperature. Test structures for modulation-doped field-effect transistors grown at 375 and 510 °C under two different As4 overpressures were also characterized by Van der Pauw measurements and low-temperature photoluminescence. The observed differences in film quality can be explained by the influence of substrate temperature and As4 flux on the cation surface mobility during growth of the InGaAs layer.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.103005
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  • 9
    Digitale Medien
    Digitale Medien
    Effects of interface reactions on electrical characteristics of metal-GaAs contacts (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 189-191 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Solid-state interface reactions between metal thin films and (100) GaAs substrates at elevated temperatures are studied by conventional and heavy-ion Rutherford backscattering spectrometry, x-ray diffraction, and transmission electron microscopy. Metals investigated in this study include Pt, Pd, Ni, Co, Rh, and W. Electrical properties of the metal/n-GaAs diodes undergoing annealing treatments at various temperatures were also measured with the current-voltage dependence. Optimum diodes with maximum barrier heights as well as minimum leakage currents are obtained for diodes annealed at temperatures at which a uniform thin layer of reacted phase is observable at the interface. The barrier heights of the optimum diodes show a linear dependence on the work functions of the various metals. The range of these barrier heights is limited by nonstoichiometry related defects as suggested by a recently proposed amphoteric native defect model.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.98918
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  • 10
    Digitale Medien
    Digitale Medien
    A comparative study of phase stability and film morphology in thin-film M/GaAs systems (M=Co, Rh, Ir, Ni, Pd, and Pt) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2070-2079 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: To attain reproducible and stable contacts to compound semiconductor devices, it is necessary to achieve thermodynamically stable phases after the reaction of metals with the compound semiconductor. In this study, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated. They are identified as MGa for M=Co, Rh, Ni, Pd, and Pt, monoarsenides of Co and Ni, diarsenides of Rh, Ir, Pd, and Pt, and Ir3Ga5. These phases, if deposited directly onto GaAs, will produce thermally stable contacts. In addition to the identification of these stable phases, analyses of the products of thin-film M/GaAs reactions by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry reveal the distribution, grain size, and crystallographic texture of these end phases. Trends in these observations across the six metal/GaAs reactions studied are explained by considering the effects of bond strength and the relative diffusivities of the reacting species. The role of film thickness in determining the final phases and the phase distribution is also considered.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339553
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