Publication Date:
2014-12-19
Description:
Publication date: January 2015 Source: Ultramicroscopy, Volume 148 Author(s): M.D. Vaudin , W.A. Osborn , L.H. Friedman , J.M. Gorham , V. Vartanian , R.F. Cook Patterned SiGe thin film structures, heteroepitaxially deposited on Si substrates, are investigated as potential reference standards to establish the accuracy of high resolution electron backscattered diffraction (HR-EBSD) strain measurement methods. The proposed standards incorporate thin films of tetragonally distorted epitaxial Si 1− x Ge x adjacent to strain-free Si. Six films of three different nominal compositions ( x =0.2, 0.3, and 0.4) and various thicknesses were studied. Film composition and out-of-plane lattice spacing measurements, by x-ray photoelectron spectroscopy and x-ray diffraction, respectively, provided independent determinations of film epitaxy and predictions of tetragonal strain for direct comparison with HR-EBSD strain measurements. Films assessed to be coherent with the substrate exhibited tetragonal strain values measured by HR-EBSD identical to those predicted from the composition and x-ray diffraction measurements, within experimental relative uncertainties of order 2%. Such films thus provide suitable prototypes for designing a strain reference standard.
Print ISSN:
0304-3991
Topics:
Electrical Engineering, Measurement and Control Technology
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Natural Sciences in General
,
Physics
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