Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 979-981
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Flash-lamp annealing was used for activation and crystal recovery of highly aluminum-implanted 6H-SiC wafers. In comparison with conventional furnace annealing, the free hole concentration can be remarkably increased at high acceptor atom concentrations (≥5×1020 cm−3). The lowest resistivity measured at room temperature was 0.01 Ω cm. In this case, the layers are characterized by metallic conduction with weak dependence of the hole concentration on the temperature. This effect is caused by freezing-in of the enhanced solubility of aluminum in SiC at the extraordinary high temperature of about 2000 °C during the light-flash. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123429
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