ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
We have studied thermo-electrical properties for Ni-based germanosilicide to understandthe influence of temperature on the evolution of sheet resistance and micro-structures of contacts onheavily-doped SiGe grown by reduced pressure chemical vapor deposition. After the deposition of Ni,Ni/Ti, Ni/Pt films on Si0.83Ge0.17 epi layer and subsequently annealing for silicide reaction, weanalyzed sheet resistance, surface roughness and reaction interfaces using four point probe method,scanning probe micrograph and transmission electron microscope. Bi-layer metal structures of Ni/Tiand Ni/Pt were investigated to study feasible use for suppressing inappropriate reaction at interface. Itis found that bi-layer structure with thin Pt interlayer presented promising properties forgermanosilicide of n+-Si0.83Ge0.17 with low sheet resistance, smooth surface morphology and hightemperature stability up to 800 oC
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.124-126.279.pdf
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