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  • 1
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Si-doped GaAs epilayers grown by low-pressure metalorganic chemical vapor deposition (MOCVD) using tertiarybutylarsine (tBAs) were investigated using a slow positron beam. The concentration of Ga vacancies, VGa, generated in GaAs epilayers was increased drastically by heavy Si doping of more than 1019 cm−3, where the deactivation of Si occurred. This result suggests that the deactivation of Si in GaAs is mainly caused by a VGa-related defect, such as a VGa-SiGa complex. The VGa concentration in the samples grown using tBAs was found to be almost the same as that grown using arsine (AsH3). On the other hand, the VGa concentration in MOCVD-grown Si-doped GaAs is lower than that in molecular-beam-epitaxy-grown material for the same Si concentrations. The generation mechanisms of VGa were found to be greatly dependent on the growth and/or doping methods, in addition to the Si doping concentration.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1699-1707 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The isochronal and isothermal annealing characteristics of acceptor-doped GaAs:Be grown at low substrate temperatures (300 °C) by molecular-beam epitaxy (LTMBE) have been studied. The Be was introduced in a range of concentrations from 1016 to 1019 cm−3. Electrical measurements of as-grown material up to the highest Be concentration of 1019 cm−3 show that no free holes are contributed to the valence band even though Raman spectroscopy of the Be local vibrational mode indicates that the majority of the Be impurities occupy substitutional sites. It is proposed that Be acceptors are rendered inactive by the high concentration of AsGa-related native donor defects present in LTMBE material. The concentration of AsGa-related defects in the neutral charge state was estimated from infrared absorption measurements to be as high as 3×1019 cm−3. A distinct annealing stage at 500 °C, similar to that found in irradiation-damaged and plastically deformed GaAs, marks a rapid decrease in the concentration of AsGa-related defects. A second annealing stage near 800 °C corresponds to the activation of Be acceptors. The presence of gallium vacancies VGa was investigated by slow positron annihilation. Results indicate an excess concentration of VGa in LTMBE layers over bulk-grown crystals. Analysis of isothermal annealing kinetics for the removal of AsGa-related defects gives an activation energy of 1.7±0.3 eV. The defect removal mechanism is modeled with VGa-assisted diffusion of AsGa to As precipitates.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7543-7548 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A monoenergetic positron beam has been used to investigate the state of interstitial oxygen in Czochralski-grown Si with coverage of SiO2 (100 nm) and poly-Si (200 nm)/SiO2 (100 nm), respectively. It was found that (i) the growth of SiO2 gives rise to a strong Doppler broadening of positrons in the bulk of Si and (ii) such a broadening can be recovered to the original level by annealing at 450 °C, by the removal of overlayers using chemical etching and by long-term aging at room temperature. This broadening was assigned to arise from the positron trapping by oxygen interstitial clusters. It was concluded that film stress is responsible for the rearrangement of oxygen atoms in Czochralski-grown Si.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6636-6636 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It is necessary to get higher c-axis alignment of Nd2Fe14B grains in Nd-Fe-B magnets for higher-energy products. During the hot working process, where melt-spun flakes were hot pressed followed by die-upsetting, hot-pressed bodies showed roughly isotropic structure while c-axis alignments were developed during die-upsetting. In this report, we studied the relationship between the reductions during upsetting and the degree of the c-axis alignments and also tried to get the formula of this relationship. We prepared samples having different reductions and evaluated remanence, c-axis alignment and strains of each flake in the samples. c-axis alignments were evaluated using x-ray diffraction.1 Strains were measured using the sizes of each deformed melt-spun flake. In the range of 50%–70% reduction, remanence was lower in the surface layer than in the center. The difference in remanence in these two regions became smaller as the reduction became larger. The distribution of c-axis alignments and strains showed similar phenomena. Then we could propose the following formula showing the relationship between reduction and c-axis alignment: (σ − σ0)/(σi − σ0) = (1 − εz)4, where σ is standard deviation of c axis alignment and σ0, σi denotes the σ value at enough large strain and initial value of σ, respectively. εz means strain parallel to pressing axis.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7251-7256 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The positron annihilation in a metal-oxide semiconductor was studied by using a pulsed monoenergetic positron beam. Lifetime spectra of positrons were measured as a function of incident positron energy for a polycrystalline Si(100 nm)/SiO2(400 nm)/Si specimen. Applying a gate voltage between the polycrystalline Si film and the Si substrate, positrons implanted into the specimen were accumulated at the SiO2/Si interface. From the measurements, it was found that the annihilation probability of ortho-positronium (ortho-Ps) drastically decreased at the SiO2/Si interface. The observed inhibition of the Ps formation was attributed to an interaction between positrons and defects at the SiO2/Si interface.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3822-3828 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The annihilation characteristics of positrons in SiO2 films grown on Si substrates were studied by using monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured as a function of incident positron energy for SiO2 (166 nm)/Si specimens fabricated by thermal oxidation. From the measurements, it was found that about 90% of positrons implanted into the SiO2 film annihilate from positronium (Ps) states. This fact was due to the trapping of positrons by open-space defects and a resultant enhanced formation of Ps in such regions. For the SiO2 film grown at 650 °C, the lifetime of ortho-Ps was found to be shorter than that in the film grown at 1000 °C. This result suggests that the volume of open-space defects in the SiO2 film decreased with decreasing the growth rate of the SiO2 film.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3269-3273 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Annihilation characteristics of positrons in SiO2/Si structure were studied by using a monoenergetic positron beam in the temperature range between 50 K and room temperature. In the SiO2 film, positrons formed positronium (Ps) and they annihilated from localized states in open spaces. Below 100 K, the Ps formation was found to be suppressed. This fact was attributed to the trapping of positrons by point defects in the SiO2 film at low temperature. The depth distribution of such traps was not homogeneous; its concentration in the central region of the SiO2 film was higher than that in the regions near the surface or the interface. The potential of monoenergetic positrons for the detection of the point defects provides unique information for depth distributions of hole traps in SiO2 films. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1510-1513 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Annihilation characteristics of positrons in various types of diamonds were studied by measurements of two-dimensional angular correlation of positron annihilation, those of Doppler Broadening profiles and those of lifetime spectra. From the measurements, it was found that there is a small amount of defects in type Ib synthesized diamond and the positron lifetime is 115 ps. On the other hand, it was found that positronium is formed in natural diamonds. Results of the double x-ray measurements suggested that IIa, IIb, and Ia type natural diamonds also may have empty space between crystallites or grain boundaries. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 473-475 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Variable-energy positron-beam studies have been carried out on Si with a 1.61 μm overlayer of SiO2 irradiated by x ray and γ ray up to the dose of 5×105 R. The Doppler broadening of annihilation photons was found to be strongly influenced by x-ray irradiation, and the effect was extended homogeneously over the entire oxide layer. A trapping model which neglects positron diffusion effects was applied to the dependence of the line shape parameter S on incident positron energy.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 25-27 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A variable-energy positron beam technique has been used to probe the vacancy-type defects in Si with a 43-nm-thick SiO2 layer induced by B+ implantation with the energy of 80 keV. From the measurements of line shape parameters as a function of incident positron energy, it was found that defects in the Si substrate are distributed in a parabolic form with the average depth shallower by 27% than the projected range of B+ ions for the specimen with a dose of 5×1012 B/cm2 and that defects are accumulated in large quantities at the SiO2 /Si interface for the specimen with higher doses.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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