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  • 1
    Electronic Resource
    Electronic Resource
    Group V incorporation in InGaAsP grown on InP by gas source molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3021-3027 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of the group V components in In1−xGaxAsyP1−y, grown lattice matched to InP by gas source molecular beam epitaxy, has been studied over the entire alloy range, 0≤y≤1, as a function of the group V source composition, the V/III beam flux ratio, and the substrate surface orientation. Several aspects of the group V incorporation are most easily understood in terms of a simple model involving a constant incorporation coefficient and an As "underpressure'' condition. An improved description of the results at lower values of the V/III flux ratio is provided by a thermodynamic model based on equilibrium reactions for the formation of the binary constituents, and using the bulk properties of the solid solution. However, the thermodynamic model is quantitatively incorrect for large values of the V/III flux ratio. Furthermore, the results for different surface orientations reveal additional weaknesses in the thermodynamic model and suggest the need to account for the surface bonding configurations in describing the group V incorporation in epitaxial growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361241
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  • 2
    Electronic Resource
    Electronic Resource
    Quantum-well strain and thickness characterization by degree of polarization (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7640-7645 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAsP/InP single quantum wells grown by gas-source molecular-beam epitaxy have been characterized for their strain and thickness using degree of polarization (DOP) of the edge emission photoluminescence at room temperature. The DOP is a measure of the relative strengths of TE- and TM-polarized e–hh and e–lh transitions. The value of the DOP increases with a decrease in thickness of the well and as the strain varies from tension to compression. For example, we observe a variation of DOP from 20% to 79% when the strain varies from 1% tension to 1% compression for a 30 A(ring) layer and from 27% to 62% when the thickness of a lattice-matched well is varied from 100 to 30 A(ring). A simple theoretical model is used to predict this trend. We show that this technique provides a sensitive measure of the variations in the strain and thickness of quantum wells. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362427
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  • 3
    Electronic Resource
    Electronic Resource
    Desorption of ultraviolet-ozone oxides from InP under phosphorus and arsenic overpressures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5167-5172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal desorption of ultraviolet-ozone oxide on InP substrates prepared for molecular-beam epitaxy has been performed with overpressures of P2, As2, and As4. Surface analysis using reflection high-energy electron diffraction, Auger electron spectroscopy, and x-ray photoelectron spectroscopy and thermodynamic calculations indicate that thermal desorption proceeds via a reaction between the oxide and atomic phosphorus from the substrate to produce volatile phosphorus oxides such as P2O3. The overpressure species serves to stabilize the substrate against surface dissociation once the oxide is removed. In the case of an arsenic overpressure the desorption of the final monolayer of oxide is slowed, relative to the case of phosphorus overpressure, due to the formation of InAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359262
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  • 4
    Electronic Resource
    Electronic Resource
    Planar channeling in GaAs/InxGa1−xAs/GaAs strained-layer structures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1510-1515 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Planar {110} channeling measurements with 1–2-MeV He+ ions have been used to investigate strained-layer structures of (100) GaAs/InxGa1−xAs/GaAs with x=0.07–0.17. Beam-steering effects in the surface GaAs layer are observed to have a major influence on {110} planar angular scans carried out in the InxGa1−xAs layers resulting generally in a double or more complex-shaped angular dip. A simple computer simulation has been developed which determines the main features of the experimental angular scan data. Comparison of simulation and experimental data allows a reasonable determination of the kink angle θK between the {110} planes for the surface GaAs and underlying strained layer. Only in limiting cases is it possible to unequivocally determine θK from the experimental data alone. They are as follows: (i) when θK=0; (ii) θK〉2ψ pc (ψ pc is the critical angle for {110} planar channeling); and (iii) when the thickness t of the top layer is thin (t(very-much-less-than)2d/ψ pc, where d is the {110} interplanar spacing).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342966
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  • 5
    Electronic Resource
    Electronic Resource
    Anisotropic interfacial strain in InP/InGaAs/InP quantum wells studied using degree of polarization of photoluminescence (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3616-3620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature, polarization-resolved photoluminescence from a (001) surface has been used to investigate InP/InGaAs/InP quantum wells grown by gas source molecular beam epitaxy. The degree of polarization of photoluminescence from a (001) surface, DOP001, is a direct measure of the anisotropy of polarization of luminescence between [110] and [11¯ 0] directions. DOP001 is observed to be strongly dependent on the quantum well thickness, composition (strain), and the gas switching time at the growth-interrupted interface. Results show that the anisotropy of polarization may be due to an effect of an anisotropic strain field that is associated with strained bonds at the interfaces of the quantum well. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365479
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  • 6
    Electronic Resource
    Electronic Resource
    InGaAs/InP quantum wires grown by gas source molecular beam epitaxy onto V-grooved InP substrates with (111)A facet sidewalls (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2358-2360 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAs/InP layers have been grown under optimized conditions by gas source molecular beam epitaxy on (100) InP substrates patterned with V grooves having (111)A facet sidewalls. Transmission electron microscopy shows that InGaAs/InP quantum wires are obtained with well thickness variation as high as a factor of 6 and that all epilayers are defect-free. Lateral subband separations are estimated by a simple one-dimensional parabolic potential model with the thickness determined by transmission electron microscopy. Photoluminescence from the InGaAs quantum wires is resolved with a selective etching technique. The quantum wire emission has a significant red shift compared to the adjacent quantum wells on the groove sidewalls and the (100) surface region between grooves. The red shift results from both the increased well thickness and compositional change due to adatom diffusion from sidewalls. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114344
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  • 7
    Electronic Resource
    Electronic Resource
    A metal-oxide-semiconductor field-effect transistor with a 20-nm channel length (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2493-2495 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a Si metal-oxide-semiconductor field-effect transistor with a 20-nm channel length using a novel step/edge technique. An Al gate is evaporated onto a step in the SiO2 gate oxide. A second Al gate, separated from the first by a plasma-enhanced chemical-vapor-deposited SiO2 layer, provides inversion layer extensions of the source and drain contacts. Electrical conductance measurements indicate a channel length approximately equal to the fabricated gate length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346512
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  • 8
    Electronic Resource
    Electronic Resource
    Direct simulation of continuous wave electron paramagnetic resonance spectra from Brownian dynamics trajectories (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 2609-2616 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A method is developed for the direct simulation of continuous wave electron paramagentic resonance (CW-EPR) line shapes from molecular trajectories. The method is applied to the cases of an axially symmetric nitroxide spin label undergoing two different types of motion (i) two-site jumping motion and (ii) isotropic rotational Brownian motion. Probabilistic models are developed that generate trajectories stable for large numbers of evolution time steps. Spectra at both 10 (X band) and 35 (Q band) GHz of satisfactory quality are generated from 40 trajectories of 214 steps sampled at 0.05 ns intervals. The resulting calculations illustrate that this method can be used as a basis of CW-EPR spectral simulation for systems undergoing arbitrarily complex dynamics using trajectories generated by classical Brownian dynamics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.462869
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  • 9
    Electronic Resource
    Electronic Resource
    Accumulation capacitance for GaAs-SiO2 interfaces with Si interlayers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1919-1921 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the properties of metal-oxide-semiconductor (MOS) structures fabricated by remote plasma-enhanced chemical vapor deposition of SiO2 upon GaAs substrates. For n-type GaAs, a silicon interlayer has been found to improve the interface properties. For our samples and this interlayer, integration of the quasi-static capacitance curve indicates a band-bending range of about 0.8 eV. For these samples, we observe a hysteresis of ∼0.6 V, and shifts of only 0.2 V in the midpoint of the rise from minimum to maximum capacitance upon changing frequency from 10 to 200 kHz at room temperature. Similar measurements for temperatures down to 80 K establish that even at such low temperatures an accumulation capacitance is observed. This sets an upper limit of about 70 meV for the separation between the interface Fermi level and the conduction-band minimum. This limit is a factor of two smaller than the best previously reported limit for approach to the conduction band of GaAs in a MOS structure. Spectroscopic ellipsometry establishes that nearly 2 A(ring) equivalent thickness of unoxidized silicon is at the SiO2/GaAs interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104012
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  • 10
    Electronic Resource
    Electronic Resource
    Anisotropic interfacial strain in InP/InGaAs/InP quantum wells (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5739-5742 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Numerical simulations based on a valence force field model have been performed to explain experimental results on the degree of polarization of photoluminescence from the [001] direction of InP/InGaAs/InP quantum wells grown on (001) substrates by gas-source molecular beam epitaxy. The results of the simulations indicate an anisotropic strain field owing to fundamental, growth-related differences between the interfaces of the quantum well. The anisotropic strain field is associated with strained Ga–P, Ga–As, and In–As bonds at the InP/InGaAs/InP interfaces. The results of the simulations are in agreement with measurements of the degree of polarization of photoluminescence from the [001] direction of the quantum wells. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368839
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