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  • 1
    Online-Ressource
    Online-Ressource
    Newark :John Wiley & Sons, Incorporated,
    Schlagwort(e): Shielding (Electricity). ; Electronic books.
    Materialart: Online-Ressource
    Seiten: 1 online resource (403 pages)
    Ausgabe: 1st ed.
    ISBN: 9781119362029
    Serie: IEEE Press Series
    DDC: 621.3028/7
    Sprache: Englisch
    Anmerkung: Intro -- Title Page -- Contents -- About the Authors -- About the Contributors -- Acknowledgements -- Acronyms -- Chapter 1 Introduction -- 1.1 Background -- 1.1.1 Anechoic Chambers -- 1.1.2 Reverberation Chambers -- 1.1.3 Relationship between Anechoic Chambers and Reverberation Chambers -- 1.2 Organisation of this Book -- References -- Chapter 2 Theory for Anechoic Chamber Design -- 2.1 Introduction -- 2.2 Absorbing Material Basics -- 2.2.1 General Knowledge -- 2.2.2 Absorbing Material Simulation -- 2.2.3 Absorbing Material Measurement -- 2.3 CEM Algorithms Overview -- 2.4 GO Theory -- 2.4.1 GO from Maxwell Equations -- 2.4.2 Analytical Expression of a Reflected Field from a Curved Surface -- 2.4.3 Alternative GO Form -- 2.5 GO-FEM Hybrid Method -- 2.6 Summary -- References -- Chapter 3 Computer-aided Anechoic Chamber Design -- 3.1 Introduction -- 3.2 Framework -- 3.3 Software Implementation -- 3.3.1 3D Model Description -- 3.3.2 Algorithm Complexities -- 3.3.3 Far-Field Data -- 3.3.4 Boundary Conditions -- 3.3.5 RAM Description -- 3.3.6 Forward Algorithm -- 3.3.7 Inverse Algorithm -- 3.3.8 Post Processing -- 3.4 Summary -- References -- Chapter 4 Anechoic Chamber Design Examples and Verifications -- 4.1 Introduction -- 4.2 Normalised Site Attenuation -- 4.2.1 NSA Definition -- 4.2.2 NSA Simulation and Measurement -- 4.3 Site Voltage Standing Wave Ratio -- 4.3.1 SVSWR Definition -- 4.3.2 SVSWR Simulation and Measurement -- 4.4 Field Uniformity -- 4.4.1 FU Definition -- 4.4.2 FU Simulation and Measurement -- 4.5 Design Margin -- 4.6 Summary -- References -- Chapter 5 Fundamentals of the Reverberation Chamber -- 5.1 Introduction -- 5.2 Resonant Cavity Model -- 5.3 Ray Model -- 5.4 Statistical Electromagnetics -- 5.4.1 Plane-Wave Spectrum Model -- 5.4.2 Field Correlations -- 5.4.3 Boundary Fields -- 5.4.4 Enhanced Backscattering Effect. , 5.4.5 Loss Mechanism -- 5.4.6 Probability Distribution Functions -- 5.5 Figures of Merit -- 5.5.1 Field Uniformity -- 5.5.2 Lowest Usable Frequency -- 5.5.3 Correlation Coefficient and Independent Sample Number -- 5.5.4 Field Anisotropy Coefficients and Inhomogeneity Coefficients -- 5.5.5 Stirring Ratio -- 5.5.6 K-Factor -- 5.6 Summary -- References -- Chapter 6 The Design of a Reverberation Chamber -- 6.1 Introduction -- 6.2 Design Guidelines -- 6.2.1 The Shape of the RC -- 6.2.2 The Lowest Usable Frequency -- 6.2.3 The Working Volume -- 6.2.4 The Q Factor -- 6.2.5 The Stirrer Design -- 6.3 Simulation of the RC -- 6.3.1 Monte Carlo Method -- 6.3.2 Time Domain Simulation -- 6.3.3 Frequency Domain Simulation -- 6.4 Time Domain Characterisation of the RC -- 6.4.1 Statistical Behaviour in the Time Domain -- 6.4.2 Stirrer Efficiency Based on Total Scattering Cross Section -- 6.4.3 Time-Gating Technique -- 6.5 Duality Principle in the RC -- 6.6 The Limit of ACS and TSCS -- 6.7 Design Example -- 6.8 Summary -- References -- Chapter 7 Applications in the Reverberation Chamber -- 7.1 Introduction -- 7.2 Q Factor and Decay Constant -- 7.3 Radiated Immunity Test -- 7.4 Radiated Emission Measurement -- 7.5 Free-Space Antenna S-Parameter Measurement -- 7.6 Antenna Radiation Efficiency Measurement -- 7.6.1 Reference Antenna Method -- 7.6.2 Non-reference Antenna Method -- 7.7 MIMO Antenna and Channel Emulation -- 7.7.1 Diversity Gain Measurement -- 7.7.2 Total Isotropic Sensitivity Measurement -- 7.7.3 Channel Capacity Measurement -- 7.7.4 Doppler Effect -- 7.8 Antenna Radiation Pattern Measurement -- 7.8.1 Theory -- 7.8.2 Simulations and Measurements -- 7.8.3 Discussion and Error Analysis -- 7.9 Material Measurements -- 7.9.1 Absorption Cross Section -- 7.9.2 Average Absorption Coefficient -- 7.9.3 Permittivity -- 7.9.4 Material Shielding Effectiveness. , 7.10 Cavity Shielding Effectiveness Measurement -- 7.11 Volume Measurement -- 7.12 Summary -- References -- Chapter 8 Measurement Uncertainty in the Reverberation Chamber -- 8.1 Introduction -- 8.2 Procedure for Uncertainty Characterisation -- 8.3 Uncertainty Model -- 8.3.1 ACF Method -- 8.3.2 DoF Method -- 8.3.3 Comparison of ACF and DoF Methods -- 8.3.4 Semi-empirical Model -- 8.4 Measurement Uncertainty of Antenna Efficiency -- 8.5 Summary -- References -- Chapter 9 Inter-Comparison Between Antenna Radiation Efficiency Measurements Performed in an Anechoic Chamber and in a Reverberatio... -- 9.1 Introduction -- 9.2 Measurement Facilities and Setups -- 9.2.1 Anechoic Chamber -- 9.2.2 Reverberation Chamber -- 9.3 Antenna Efficiency Measurements -- 9.3.1 Theory -- 9.3.1.1 Radiation Efficiency Using the Anechoic Chamber -- 9.3.1.2 Radiation Efficiency Using the Reverberation Chamber -- 9.3.2 Comparison Between the AC and the RC -- 9.3.2.1 Biconical Antenna -- 9.3.2.2 Horn Antenna -- 9.3.2.3 MIMO Antenna -- 9.4 Summary -- Acknowledgement -- References -- Chapter 10 Discussion on Future Applications -- 10.1 Introduction -- 10.2 Anechoic Chambers -- 10.3 Reverberation Chambers -- References -- Appendix A Code Snippets -- A.1 Import STL File into Matlab -- A.2 Possible Intersection Check Between a Triangle and a Hexahedron -- A.3 Intersection Check Between a Ray and a Hexahedron in the Octree -- A.4 Intersection Check Between a Ray and a Triangle -- A.5 Field Uniformity Extraction -- A.6 Mean and Standard Deviation of the Maximum Received Power with N Independent Samples -- A.7 Mean and Standard Deviation of the Maximum Rectangular E-Field with N Independent Samples -- A.8 Monte Carlo Simulation in the RC -- A.9 The Plot of Theoretical Rayleigh CDF -- Appendix B Reference NSA Values -- Reference -- Appendix C Test Report Template -- C.1 Summary. , C.2 Date and Place of Measurements -- C.3 Description of the Test Site -- C.4 Measurements and Results -- C.4.1 Normalised Site Attenuation (NSA) -- C.4.1.1 Test Description -- C.4.1.2 Measurement Equipment -- C.4.1.3 Results -- C.4.2 Site VSWR -- C.4.2.1 Test Description -- C.4.2.2 Measurement Equipment -- C.4.2.3 Results -- C.4.3 Field Uniformity (FU) Measurements -- C.4.3.1 Test Description -- C.4.3.2 Measurement Equipment -- C.4.3.3 Results -- Reference -- Appendix D Typical Bandpass Filters -- References -- Appendix E Compact Reverberation Chamber at NUAA -- E.1 Design Guidelines -- E.2 Measurements -- E.2.1 Field Uniformity -- E.2.2 The Ratio of Standard Deviation and Mean Value -- E.2.3 Q Factor -- E.2.4 Enhanced Backscatter Coefficient -- E.3 Summary -- References -- Appendix F Relevant Statistics -- F.1 Propagation of Uncertainty -- F.2 Parameter Estimation -- F.3 Useful Laws and Theorems -- References -- Index -- EULA.
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  • 2
    Online-Ressource
    Online-Ressource
    Berlin, Heidelberg :Springer Berlin / Heidelberg,
    Schlagwort(e): Conformal invariants -- Congresses. ; Electronic books.
    Materialart: Online-Ressource
    Seiten: 1 online resource (285 pages)
    Ausgabe: 1st ed.
    ISBN: 9783642393839
    Serie: Mathematical Lectures from Peking University Series
    DDC: 510
    Sprache: Englisch
    Anmerkung: Intro -- Conformal Field Theories and Tensor Categories -- Preface -- Contents -- From Hopf Algebras to Tensor Categories -- 1 Introduction -- 2 Preliminaries -- 2.1 Notations -- 2.2 Tensor Categories -- 2.3 Hopf Algebras -- 2.4 Nichols Algebras -- 3 Spherical Hopf Algebras -- 3.1 Spherical Hopf Algebras -- 3.2 Spherical Categories -- 3.3 Quantum Dimensions -- 3.3.1 Some Properties of Quantum Dimension -- 3.3.2 Computing the Quantum Dimension -- 3.3.3 Projective Objects Have Null Quantum Dimension -- 3.4 The Non-degenerate Quotient -- 3.5 Pointed or Copointed Pivotal Hopf Algebras -- 3.5.1 Pivots in the Pointed Case -- 3.5.2 Pivots in the Copointed Case -- 3.6 Spherical Hopf Algebras with Involutory Pivot -- 3.6.1 The Pointed Abelian Case -- 3.6.2 The Pointed Nonabelian Case -- 3.6.3 The Copointed Case -- 3.6.4 Fusion subcategories of RepH, Involutory Pivot -- 3.7 Ribbon Hopf Algebras -- 3.8 Cospherical Hopf Algebras -- 4 Tilting Modules -- 4.1 Quasi-hereditary Algebras and Tilting Modules -- 4.2 Induced and Produced -- 4.2.1 De nition and General Properties -- 4.2.2 The Finite Case -- 4.2.3 Further Properties for Inclusions of Hopf Algebras -- 4.2.4 Quantum Groups -- 4.3 Finite-Dimensional Nichols Algebras of Diagonal Type -- 4.3.1 Weights -- 4.3.2 Nichols Algebras of Diagonal Type -- 4.3.3 Pre-Nichols Algebras -- 4.3.4 Lusztig Algebras -- 4.4 The Small Quantum Groups -- 4.5 Generalized Quantum Groups -- References -- Pattern-of-Zeros Approach to Fractional Quantum Hall States and a Classi cation of Symmetric Polynomial of In nite Variables -- 1 Introduction -- 1.1 What Is a Quantum Many-Boson System -- 1.2 What Are Quantum Phases -- 1.3 How to Classify Quantum Phases of Matter -- 2 Examples of Fractional Quantum Hall States -- 2.1 The Hamiltonian for FQH Systems -- 2.2 Three Ideal FQH States: The Exact Zero-Energy Ground States. , 3 The Universal Properties of FQH Phases -- 3.1 The Filling Fractions of FQH Phases -- 3.1.1 Why nu=1 for State Psi1=i< -- j (zi-zj) e-|zi|2/4 -- 3.1.2 Why nu=1/m for the Laughlin State Psi1/m=i< -- j (zi-zj)m e-|zi|2/4 -- 3.2 Quasiparticle and Fractional Charge in nu=1/m Laughlin States -- 3.3 The Concept of Quasiparticle Type -- 3.4 Fractional Statistics in Laughlin States -- 3.5 Quasi-holes in the nu=1 Pfaf an State -- 3.5.1 Charge-1 and Charge-1/2 Quasi-holes -- 3.5.2 How Many States with Four Charge-1/2 Quasi-holes? -- 3.6 Edge Excitations and Conformal Field Theory -- 4 Pattern-of-Zeros Approach to FQH States and Symmetric Polynomials -- 4.1 What Is In nite-Variable Symmetric Polynomial -- 4.1.1 What Is Pattern of Zeros? -- 4.1.2 The Unique Fusion Condition -- 4.1.3 Different Encodings of Pattern of Zeros Sa -- 4.1.4 The Cluster Condition -- 4.1.5 A De nition of In nite-Variable Symmetric Polynomial -- 4.2 A Classi cation of In nite-Variable Symmetric Polynomials -- 4.2.1 Derived Polynomials -- 4.2.2 The Concave Conditions on Pattern of Zeros -- 4.2.3 Some Additional Conditions -- 4.2.4 Primitive Solutions for Pattern of Zeros -- 4.2.5 How Good Is the Pattern-of-Zeros Classi cation? -- 4.3 Topological Properties from Pattern of Zeros -- 4.3.1 Pattern of Zeros of Quasiparticle Excitations -- 4.3.2 Conditions on Quasiparticle Pattern of Zeros Sgamma -- a -- 4.3.3 The Solutions for the Quasiparticle Patterns of Zeros -- 4.3.4 Quasiparticle Fusion Algebra: gamma1 gamma2=gamma3 Ngamma3gamma1gamma2 gamma3 -- 5 The Vertex-Algebra + Pattern-of-Zeros Approach -- 5.1 Z-Graded Vertex Algebra -- 5.2 Zn-Vertex Algebra -- 6 Summary -- References -- Virasoro Central Charges for Nichols Algebras -- 1 Introduction -- 1.1 From Virasoro to Extended Algebras -- 1.2 Points to Note -- 1.3 Notation -- 2 The List, Item 1 -- 3 The List, Items 2.*. , 4 The List, Items 3.* -- 5 The List, Items 4.* -- 6 The List, Items 5.* -- 7 Conclusions -- Appendix A: Virasoro Algebra -- Appendix B: W3 Logarithmic Octuplet Algebras -- References -- Logarithmic Bulk and Boundary Conformal Field Theory and the Full Centre Construction -- 1 Introduction -- 2 Bulk and Boundary Correlators -- 2.1 Consistency Conditions for CFT on the Complex Plane -- 2.2 Background States, Non-degeneracy, and Ideals -- 2.3 Modular Invariant Partition Functions -- 2.4 Consistency Conditions for CFT on the Upper Half Plane -- 2.5 From Boundary to Bulk -- 3 Algebraic Reformulation -- 3.1 Conjugates -- 3.2 Deligne Product -- 3.3 Braiding -- 3.4 Algebras -- 3.5 The Full Centre in CCrev -- 3.6 The Right Adjoint R of T -- 3.7 Left Centre and Full Centre -- 4 The W2,3-Model with c=0 -- 4.1 The W-Algebra and Some of Its Representations -- 4.2 Computation of R(W(0)) -- 4.3 Computation of R(W*) -- 4.4 Modular Invariance -- 4.5 Correlators and OPEs in R(W*) -- 4.5.1 Some OPEs -- 4.5.2 Some Correlators -- Appendix A: Conditions B1-B5 -- Appendix B: Further Details on the Algebraic Reformulation -- B.1 Proof of Theorem 3.5 -- B.2 Idempotent Absolutely Simple Objects Are Algebras -- B.3 Proof of Theorem 3.16 -- B.4 Proofs for Theorems 3.17 and 3.18 -- B.5 Adjoint to the Tensor Product -- B.6 More Details on Centres -- Appendix C: OPEs in R(W*) -- C.1 OPEs Involving Omega -- C.2 OPEs Involving the Holomorphic Field T -- C.3 OPEs of Generalised Weight Zero Fields -- References -- Logarithmic Tensor Category Theory for Generalized Modules for a Conformal Vertex Algebra, I: Introduction and Strongly Graded Algebras and Their Generalized Modules -- 1 Introduction -- 1.1 Tensor Category Theory for Finitely Reductive Vertex Operator Algebras -- 1.2 Logarithmic Tensor Category Theory -- 1.3 The Lie Algebra Case -- 1.4 The Vertex Algebra Case. , 1.5 Some Recent Applications and Related Literature -- 1.6 Main Results of the Present Work -- 2 The Setting: Strongly Graded Conformal and Möbius Vertex Algebras and Their Generalized Modules -- References -- C2-Co nite W-Algebras and Their Logarithmic Representations -- 1 Introduction: Irrational C2-Co nite Vertex Algebras -- 2 Preliminaries -- 3 Quantum W-Algebras from Integral Lattices -- 3.1 Af ne W-Algebras -- 3.2 Further Extended Af ne W-Algebras -- 3.3 Maximally Extended W-Algebras: A Conjecture -- 3.4 Triplet Vertex Algebra W(p) -- 4 W-Algebra Extensions of Minimal Models -- 4.1 The Triplet Vertex Algebra Wp,2 -- 5 Construction of Logarithmic Modules and Related Problems -- 5.1 Progenerator and Logarithmic Modules -- 5.2 Screenings and Logarithmic Modules -- 6 Some Logarithmic Modules for W(p)Q -- 7 Conclusion -- References -- C1-Co niteness and Fusion Products for Vertex Operator Algebras -- 1 Introduction -- 2 Proof of Key Theorem -- 3 On Fusion Products -- 4 Proof of Main Theorem -- 5 Discussion -- References.
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  • 3
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2394-2396 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Photoluminescence (PL) at 77 K is used to study tensile stress variations in chemically etched stripes of a 3-μm-thick GaAs film grown on Si substrate. The etched patterns consist of 1-mm-long stripes with widths ranging from 100 to 4 μm and 4 μm by 4 μm squares. We observed monotonic shift of PL peaks towards shorter wavelength for decreasing stripe width. In particular, when the width of the stripe is less than 7 μm, tensile stress is essentially uniaxial as evident from the magnitude of shift in PL peaks. The polarization characteristics of the PL spectra of these uniaxially stressed stripes are investigated and found to agree well with theoretical predictions.
    Materialart: Digitale Medien
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  • 4
    Publikationsdatum: 2023-12-01
    Beschreibung: Dissolved rare earth elements (REEs) distribution in marginal sea is of significant importance to understand geochemical cycling of REEs in the ocean. We determined REEs concentrations of four vertical profiles of seawater collected by KK1803 cruise (R/V Jiageng) from April to May 2018 in the northern South China Sea (SCS), the largest marginal sea of the western Pacific Ocean. These seawater stations are located from the northern to the central SCS that allow to evaluate the REEs sources of surrounding rivers and water masses from the western Pacific Ocean to the SCS. All seawater samples were filtered on board by using 0.45 mm membrane. (MilliPore Corp.). The results show that surface seawater REEs concentration are higher than the subsurface water indicating that surface seawater REEs distribution is likely impacted by terrigenous input through river discharges. Below the subsurface water, REEs concentrations generally increase with depths and are similar to what has been observed in open oceans.
    Schlagwort(e): [RVSS]; Cerium, dissolved; Date/Time of event; DEPTH, water; Dysprosium, dissolved; Elevation of event; Erbium, dissolved; Europium, dissolved; Event label; Gadolinium, dissolved; Holmium, dissolved; ICP-MS, Thermo Scientific, XSeries 2; Jiageng; KK1803; Lanthanum, dissolved; Latitude of event; Longitude of event; Lutetium, dissolved; Neodymium, dissolved; Praseodymium, dissolved; Rare earth elements; Rosette Vertical Sampling System; Samarium, dissolved; SCS18-10; SCS18-18; SCS18-25; seawater; South China Sea; Terbium, dissolved; Thulium, dissolved; Ytterbium, dissolved
    Materialart: Dataset
    Format: text/tab-separated-values, 644 data points
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  • 5
    Publikationsdatum: 2017-12-14
    Beschreibung: The fifth Workshop on Systematic Errors (WSE) in weather and climate models was hosted by Environment and Climate Change Canada (ECCC) on under the auspices of the Working Group on Numerical Experimentation (WGNE), jointly sponsored by the Commission of Atmospheric Sciences of the World Meteorological Organization (WMO) and the World Climate Research Programme (WCRP). This major event welcomed over 200 scientists from the weather and climate communities. The workshop primary goal was to increase the understanding of the nature and cause of systematic errors in numerical models across timescales. Out of 240 abstracts submitted to the workshop, 48 talks and 132 posters were presented.
    Repository-Name: EPIC Alfred Wegener Institut
    Materialart: Article , isiRev
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  • 6
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 5025-5035 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: The development of surface roughness during step flow etching of vicinal one- and two-dimensional surfaces was investigated using kinetic Monte Carlo simulations. The two-dimensional simulations were performed on an unreconstructed Si(111) lattice and were designed to model aqueous silicon etching. In one dimension, the etching of a surface with noninteracting steps leads to a progressive roughening of the surface. In contrast, steps on a two-dimensional surface dynamically repel one another during etching, even when the steps are noninteracting. Dynamic step–step repulsion is the consequence of a feedback mechanism that is induced by step collisions and mediated by the morphology of the etching step and the presence of etch pits. The stability of this feedback mechanism to morphological perturbations is analyzed. During step flow etching, feedback can be enhanced either by increasing the roughness of the steps or the density of pits on the etched surface. Under certain conditions, etching can produce step distributions that are more regular than the corresponding equilibrium distribution. The implications of this observation on the production of very flat surfaces by etching are discussed. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Industrial & engineering chemistry research 34 (1995), S. 4277-4283 
    ISSN: 1520-5045
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2154-2156 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied the Shubnikov–de Haas (SdH) oscillation and the quantum Hall effect on a modulation-doped GaAs/AlGaAs heterostructure and found that there is no parallel conductivity and no failure in obeying the law μ∼nγ when the electron concentration in the interface is increased by exposing the sample to white light. The photoconductivity can persist for several days at room temperature if the sample is not annealed.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 215-217 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: GaAs films have been grown on Si substrates patterned with SiN by molecular beam epitaxy. The pattern consists of bare Si stripe of width ranging from 10 to 100 μm surrounded by SiN on both sides and a reference area of bare Si. 77 K photoluminescence (PL) spectrum and intensity are measured on the single crystalline GaAs films grown on these stripes and the reference area. For 1.5- and 3-μm-thick films, PL intensity from the 10 μm stripe shows 140% and 75% increase over the reference area, respectively. This remarkable increase in the PL intensity is believed due to the reduction of dislocations inside the window area. The improvement in the optical quality makes selective-area molecular beam epitaxy a very attractive technique for the fabrication of optical devices on Si substrate.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Inorganic chemistry 34 (1995), S. 2323-2333 
    ISSN: 1520-510X
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
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