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  • 1
    In: Journal of Electronic Materials, Springer Science and Business Media LLC, Vol. 24, No. 5 ( 1995-5), p. 697-705
    Type of Medium: Online Resource
    ISSN: 0361-5235 , 1543-186X
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 1995
    detail.hit.zdb_id: 2032868-0
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  • 2
    Online Resource
    Online Resource
    AIP Publishing ; 1989
    In:  Journal of Applied Physics Vol. 65, No. 5 ( 1989-03-01), p. 1936-1941
    In: Journal of Applied Physics, AIP Publishing, Vol. 65, No. 5 ( 1989-03-01), p. 1936-1941
    Abstract: We report studies of the molecular-beam-epitaxial growth of In2Te3. The unique structure of In2Te3, with 1/3 of the In sublattice sites vacant, is of fundamental interest for molecular-beam-epitaxial growth dynamics. We show that thin-film (500–7000 Å) single-crystal In2Te3 can be grown successfully on InSb(100) homoepitaxial layers at substrate temperatures of 300–350 °C and Te/In flux ratios of 3/2 to 5/2. Epitaxy has been monitored by reflection high-energy electron diffraction and the stoichiometry of the grown layers assessed by Auger spectroscopy and energy dispersive x-ray analysis. Raman studies of the layers are presented and compared with a bulk In2Te3 standard. Crystal structure has been determined by x-ray diffraction using Weissenburg and oscillation photographs, confirming that the layers have a fcc crystal structure with a lattice parameter of 18.50 Å, in excellent agreement with the bulk value. Band-gap measurements have been performed on the layers by photoreflectance. We report a value for the α-In2Te3 band gap of 1.19 and 1.31 eV at 300 and 77 K, respectively. Molecular-beam-epitaxial growth of InSb and CdTe on epitaxial In2Te3 films for fabrication of InSb/In2Te3/InSb and InSb/In2Te3/CdTe multilayers has been studied. Auger depth profiling of the resulting layers shows severe intermixing into the In2Te3. These results are supported by thermodynamic considerations of the InSb-In2Te3 interface.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1989
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 3
    Online Resource
    Online Resource
    American Vacuum Society ; 1987
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 5, No. 5 ( 1987-09-01), p. 3184-3185
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 5, No. 5 ( 1987-09-01), p. 3184-3185
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1987
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 4
    Online Resource
    Online Resource
    American Vacuum Society ; 1985
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 3, No. 1 ( 1985-01-01), p. 226-232
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 3, No. 1 ( 1985-01-01), p. 226-232
    Abstract: We report Raman scattering (RS) measurements from Hg1−xCdxTe (x≊0.2) and related materials HgTe, Hg1−xMnxTe (x≊0.1 and band gap ∼100 meV at 77 ° K) at 77 °K and Br/methanol polished 〈100〉 CdTe at 300 °K. Polarization dependent RS from the three principal faces, i.e., 〈100〉, 〈11̄0〉, and 〈111〉 of Hg1−xCdxTe and HgTe was studied and the symmetries of the various spectral features were identified. All measurements were made in the back-scattering geometry using the 5145 Å line of the Ar+ laser. In addition to the q=0 transverse and longitudinal optical (TO and LO) phonon features in HgTe, Hg1−xCdxTe and Hg1−xMnxTe (mixed-mode behavior in alloys) we observed several features that indicate surface quality (S– mode) and deviations from ideal crystallinity (‘‘defect mode’’, ‘‘clustering mode’’, and symmetry forbidden TO mode). The extremely surface sensitive S– feature observed at 132 cm−1 in p-Hg0.8Cd0.2Te is assigned to a coupled LO phonon-intersubband excitation. A 108 cm−1 feature present in HgTe and some samples of Hg0.8Cd0.2Te was confirmed to possess TO symmetry and may originate in antisite defects. The strong peak observed at 135 cm−1, displaying Γ1 symmetry, from all Hg1−xCdxTe samples may arise from clustering of the cations or vacancies; a weak feature observed at 132 cm−1 from Hg1−xMnxTe may also originate from clustering effects. The presence of a symmetry forbidden TO feature in 〈100〉 HgTe as well as 〈100〉 Hg0.8Cd0.2Te may be due to surface morphology or built in strains in the crystals. The HgTe RS contained a broad feature with an atomic displacement LO symmetry at 133 cm−1, slightly below the LO peak (139 cm−1), probably as a result of a screened LO mode. The Br/methanol treated 〈100〉 CdTe was found to have a thin (∼10 Å) surface layer of Te that could be removed by a rinse in 1 N KOH/methanol.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1985
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 5
    Online Resource
    Online Resource
    American Vacuum Society ; 1993
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 11, No. 4 ( 1993-07-01), p. 917-922
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 11, No. 4 ( 1993-07-01), p. 917-922
    Abstract: Superlattices composed of III–V heterostructures have established applications in high-speed electronic and optoelectronic devices. As layer thicknesses are reduced, the role of heterostructure interface sharpness becomes more critical to ensuring high quality two-dimensional growth. In this work, short-period (less than 1 nm) superlattices with active layer thicknesses of 31 nm were investigated to assess interface roughness in the initial stages of growth. X-ray diffraction was used to evaluate interface roughness and to calculate superlattice periodicity. Results suggest that surface roughening by islanding may be promoted by GaAs buffer layers that are 10–100 nm thick. Smoother interfaces were obtained in samples with buffer layers 250 nm and greater.  
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1993
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 6
    Online Resource
    Online Resource
    American Vacuum Society ; 1988
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 6, No. 3 ( 1988-05-01), p. 1421-1425
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 6, No. 3 ( 1988-05-01), p. 1421-1425
    Abstract: We have studied ion-implanted {100} CdTe using the contactless technique of photoreflectance. The implantations were performed using 50–400 keV boron ions to a maximum dosage of 1.5×1016 cm−2 and the annealing was accomplished at 500 °C under vacuum. The spectral measurements were made at 77 K near the E0 and E1 critical points; all the spectra were computer fitted to Aspnes’ theory. The spectral line shapes from the ion damaged, partially recovered, and undamaged or fully recovered regions could be identified and the respective volume fraction of each phase was estimated.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1988
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 7
    Online Resource
    Online Resource
    AIP Publishing ; 1999
    In:  Journal of Applied Physics Vol. 85, No. 5 ( 1999-03-01), p. 2875-2880
    In: Journal of Applied Physics, AIP Publishing, Vol. 85, No. 5 ( 1999-03-01), p. 2875-2880
    Abstract: We compare the photoluminescence spectra from a series of Si1−xGex/Si (0.1⩽x⩽0.3) multiple quantum well (MQW) samples grown with atomic hydrogen to a series of similar samples grown without atomic hydrogen. All of the samples were grown at 710 °C. We observe intense quantum confined photoluminescence in the Si1−xGex/Si MQW samples grown without atomic hydrogen. No quantum confined photoluminescence was observed in the Si1−xGex/Si MQW samples grown with atomic hydrogen. This was unexpected, since quantum confined photoluminescence has been observed in the hydrogen-assisted growth of Si1−xGex/Si quantum well structures grown at lower temperatures by other researchers. We believe that this is caused by defects, introduced into the samples during growth with atomic hydrogen, which lead to efficient nonradiative centers that compete with the radiative centers. These defects lead to a reduction of the photoluminescence of the samples grown with atomic hydrogen. Since hydrogen is used as a surfactant to reduce the deleterious effects due to Ge segregation, understanding its role is an important step in SiGe materials development.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1999
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 8
    Online Resource
    Online Resource
    AIP Publishing ; 1982
    In:  Applied Physics Letters Vol. 41, No. 9 ( 1982-11-01), p. 860-862
    In: Applied Physics Letters, AIP Publishing, Vol. 41, No. 9 ( 1982-11-01), p. 860-862
    Abstract: We have investigated the effects of laser annealing on the CdTe/Hg0.8Cd0.2Te (111) system by measuring the electrolyte electroreflectance (EER) spectra from both the CdTe layer as well as the interface region. The sample was a Hg0.8Cd0.2Te (111) single crystal with a 500-Å-thick polycrystalline CdTe film deposited on it; a section of the interface was annealed using the neodymium: yttrium aluminum garnet (Nd:YAG) laser 1.06-μm line. Our observations indicate the presence of strain due to lattice mismatch at the interface; laser annealing relieves this strain. In addition, the annealing also causes the diffusion of Hg ions from the interfacial region into the passivant layer. The changes in the line shapes of the EER spectra also show an improvement in the crystalline quality of the passivant layer.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1982
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 9
    Online Resource
    Online Resource
    American Vacuum Society ; 1986
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 4, No. 4 ( 1986-07-01), p. 2028-2033
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 4, No. 4 ( 1986-07-01), p. 2028-2033
    Abstract: We present results of the first photoreflectance (PR) study in Hg0.7Cd0.3Te and MBE and bulk Cd1−xZnxTe and the first detailed measurement of the variation of E1 optical transition energy with x in Cd1−xZnxTe at 77 K. Photoreflectance is a completely contactless form of electroreflectance. The E1 optical transition line shapes were measured and analyzed using currently available models. The MBE Cd1−xZnxTe samples exhibited E1 features that could not be fit satisfactorily, which may be due to the presence of an electron-hole interaction that was not included. The results indicate that the dependence of E1 with x may be expressed as follows: E1(x)=3.523 eV−0.022 eV ⋅ x+0.267 eV ⋅ x2. The linewidths of the E1 feature measured at 77 K in all the samples were much smaller than those at 300 K owing to the reduction in temperature broadening. This suggests that, in addition to being contactless, the characterization accuracy available with PR may be significantly better than that available in techniques such as electrolyte electroreflectance that are confined to room temperatures.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1986
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 10
    Online Resource
    Online Resource
    Springer Science and Business Media LLC ; 1990
    In:  MRS Proceedings Vol. 209 ( 1990)
    In: MRS Proceedings, Springer Science and Business Media LLC, Vol. 209 ( 1990)
    Abstract: We have analysed the far infrared reflectivity and Raman scattering spectra of phonons in Cd 1−x Mn x Te, Zn 1−x Mn x Te, Hg 1−x Mn x Te, and Hg 1−x Zn x Te for low composition of x. Unlike CdMnTe and ZnMnTe, weak impurity induced peaks are observed in HgZnTe and HgMnTe, near ˜ 96 and 98 cm −1 , well above the LA-phonon band of HgTe. Comprehensive calculation of lattice dynamics based on a semi-empirical Green's function theory has provided convincing arguments to support the above features as gap modes of Zn and Mn in HgTe. The theory also predicts the possibility of resonance modes, above the TA cutoff of HgTe, in HgMnTe and HgZnTe to be observed by IR spectroscopy.
    Type of Medium: Online Resource
    ISSN: 0272-9172 , 1946-4274
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 1990
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