In:
Applied Physics Letters, AIP Publishing, Vol. 53, No. 12 ( 1988-09-19), p. 1080-1082
Abstract:
We report a modulation spectroscopy experiment on GaAs and Ga0.82Al0.18As at elevated temperatures. Using the contactless electromodulation method of photoreflectance, the direct gaps (E0) of these materials have been observed from 77 K to 600 °C. The latter temperature is comparable to molecular beam expitaxy, metalorganic chemical vapor deposition, growth temperatures, etc. Our results are at the highest temperature yet reported for E0 (GaAs) in a reflectance experiment and the first observation of E0 (Ga1−xAlxAs) at elevated temperatures. From the latter, the Varshni coefficients [Physica 34, 149 (1967)] for Ga0.82Al0.18As were determined.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1988
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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