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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial ZnS films grown on GaAs (001) and (111) by pulsed-laser ablation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7818-7822 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed KrF (248 nm) laser ablation of a polycrystalline ZnS target has been used to grow very smooth and carbon-free, epitaxial ZnS thin films on GaAs (001) and (111). Films were grown at temperatures of 150–450 °C, using a rotating substrate heater and deposition geometry that produces highly uniform film thickness, without nucleation or surface-roughening problems. X-ray diffraction and high-resolution transmission electron microscopy (HRTEM) show that the ZnS films are fully epitaxial (in-plane aligned). Films grown at the optimum temperature of 325 °C have x-ray rocking curve widths that are indistinguishable from molecular-beam-epitaxy-grown ZnS/GaAs films of the same thickness. Rutherford backscattering spectrometry and HRTEM show that in films ∼275 nm thick, the ∼150 nm nearest the GaAs-ZnS interface is highly faulted, due to the ∼4.1% lattice mismatch and/or the low ZnS stacking fault energy, but the upper ∼125 nm is much less defective. The anisotropy of the ZnS epitaxial growth rate between the GaAs (001) and GaAs (111) surfaces was found to be slightly temperature dependent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353956
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  • 2
    Electronic Resource
    Electronic Resource
    Analysis of C films formed on single-crystal Cu by ion implantation and laser annealing (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3485-3491 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal Cu has been ion implanted with C to fluences of 1×1018/cm2 followed by laser annealing with nanosecond pulses from an excimer laser and subsequently etched in dilute nitric acid. Raman spectroscopy, Rutherford backscattering, and electron microscopy have been used to identify the distribution and morphology of the carbon at different stages of sample processing. Polycrystalline graphite and amorphous carbon films are typically produced over a wide range of processing conditions; well-ordered graphite can be formed as well. Small Cu crystallites are seen in areas where the etch lifted the C films off the substrate. However, extensive analysis by Raman spectroscopy and electron microscopy provides no evidence for the formation of the diamond phase of carbon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351425
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  • 3
    Electronic Resource
    Electronic Resource
    Damage formation and substitutionality in 75As++-implanted diamond (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2986-2990 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rutherford backscattering spectrometry (RBS) has been used to study damage formation and substitutionality in synthetic diamonds implanted with 250-keV 75As++ at either 600 °C or room temperature. Lattice damage following implantation at 600 °C was substantially less than damage following room-temperature implantation and appears to be composed of a higher fraction of extended defects. A significant portion of the As implanted at 600 °C was found to be in substitutional lattice sites with substitutional fractions as high as 50%. Changing the ion flux by three orders of magnitude during high-temperature implantation had no effect on either residual damage or substitutionality as indicated by the RBS analysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349326
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  • 4
    Electronic Resource
    Electronic Resource
    Formation and optical characterization of nanometer dimension colloids in silica formed by sequentially implanting In and Ag (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3546-3548 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of a series of In then Ag sequentially implanted silica samples are examined as a function of the relative concentrations of implanted In and Ag. The doses used were in ratios, In to Ag, of 9:3, 6:6, and 3:9. Energy of implantation was 320 keV for the In and 305 keV for the Ag. Nominal total doses as determined by current integration for the three samples were 12×1016 (In+Ag) ions/cm2. The depth profile of the implanted ions and optical absorption were found to be a function of the relative doses and to differ significantly from samples implanted separately with either In or Ag. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358584
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  • 5
    Electronic Resource
    Electronic Resource
    GaAs nanocrystals formed by sequential ion implantation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1876-1880 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sequential ion implantation of As and Ga into SiO2 and α-Al2O3 followed by thermal annealing has been used to form zinc-blende GaAs nanocrystals in these two matrices. In SiO2, the nanocrystals are nearly spherical and randomly oriented, with diameters less than 15 nm. In Al2O3, the nanocrystals are three dimensionally aligned with respect to the crystal lattice. Infrared reflectance measurements show evidence for surface phonon modes in the GaAs nanocrystals in these matrices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361088
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  • 6
    Electronic Resource
    Electronic Resource
    Physical and optical properties of Cu nanoclusters fabricated by ion implantation in fused silica (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 708-715 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu clusters of nanometer dimensions were created by implantation of Cu ions into pure fused silica substrates at energies of 160 keV. The sizes and size distributions of the Cu clusters were measured by transmission electron microscopy, and were found to be determined by the ion-beam current during implantation. Optical-absorption spectra of these materials show the size-dependent surface plasmon resonance characteristic of noble-metal clusters. There are also significant size-dependent effects in both the nonlinear index of refraction and two-photon absorption coefficients. The distinctive variations in linear and nonlinear optical properties with Cu nanocluster sizes and size distributions affords potentially interesting possibilities for using these materials in nonlinear optical devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357814
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  • 7
    Electronic Resource
    Electronic Resource
    Chemical interaction of Si, Ti, and Mo with graphite surfaces (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7695-7702 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction of Si, Ti, and Mo atoms with pyrolytic graphite substrates has been studied for evaporated layers of about 100 nm and implanted ions with mean ranges between 2 and 4 nm. In the temperature range from room temperature to 1800 K the thermal diffusion of carbon into the evaporated layers has been studied by Rutherford backscattering spectroscopy while the temperature dependence of the carbide formation has been studied by x-ray photoelectron spectroscopy. For all three systems stable carbidic phases are predicted by equilibrium phase diagrams. For Ti the formation of TiC is already observed after room temperature implantation, while for Mo annealing to 1200 K is necessary for Mo2C formation. In the case of Si oxygen contamination due to the air transfer after implantation resulted in a mixed SiOxCy phase which only transformed into a SiC phase at temperatures above 900 K, where the oxygen was released. The temperature range of stability of the carbidic layers was found to be correlated to the melting temperature of the metal–carbide eutectic. Above this temperature the metal atoms rapidly dissolve in the graphite lattice. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362673
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  • 8
    Electronic Resource
    Electronic Resource
    Heteroepitaxy of GaAs on Si and Ge using alternating, low-energy ion beams (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1439-1441 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystalline GaAs films have been grown epitaxially on silicon and germanium substrates at 400 °C by direct deposition of alternating 69Ga and 75As layers from electromagnetically switched low-energy ion beams. Positive gallium and arsenic ions were extracted simultaneously from a single ion source and mass analyzed prior to deceleration to a controlled deposition energy of 30 or 40 eV. Atomic layers of gallium and arsenic were deposited alternately by switching the analyzing magnetic field repeatedly to select either the 69Ga+ or 75As+ species. The structure and composition of the resulting layers have been characterized by cross-section transmission electron microscopy and ion channeling/backscattering spectrometry. The best crystal quality was obtained for a GaAs layer deposited on Ge using a 30 eV beam. This layer gave an ion channeling minimum yield of ≈6%. These results demonstrate the feasibility of growing isotopically pure, single-crystal compound semiconductor layers at relatively low temperatures by deposition from alternating, fully ionized, low-energy beams.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100690
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  • 9
    Electronic Resource
    Electronic Resource
    Annealing of damage and stability of implanted ions in ZnO crystals (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1140-1144 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing of Bi, Cr, and Mn, implanted in ZnO, has been studied by Rutherford backscattering, ion channeling, and secondary ion mass spectroscopy. Implantation of ∼1016 ions/cm2 of any of these elements produces large concentrations of Zn interstitials, but no completely amorphous region. The temperature at which these interstitials anneal is a function of the implant species. Other defects produced by the implantation, which give rise to dechanneling and a consequent increased scattering probability in the tails of backscattering spectra, anneal at significantly higher temperature. This annealing is also a function of the implant species. Motion of the implant ions themselves does not occur when the interstitials anneal; it takes place above 700 °C for Bi and Mn, and above 1000 °C for Cr.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341875
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  • 10
    Electronic Resource
    Electronic Resource
    Radiation damage and annealing in graphite implanted with H+2 and Mo+ (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2603-2608 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation damage due to H+2 and Mo+ implantation into hot-worked pyrolytic graphite and into single-crystal graphite flakes has been studied using 1-MeV 4He+ ion channeling. The implant energies used, 35 keV for H+2 and 120 keV for Mo+, yielded ranges of about 1600 and 600 A(ring), respectively. For H2 implantation, a partially crystalline surface layer remains after a fluence of 2×1016 H/cm2; this layer is completely disordered at 2×1017 H/cm2. At higher hydrogen fluences a surface layer exfoliates. For Mo implantation the disorder introduced at a fluence of 5×1014 Mo/cm2 is sufficient to prevent channeling throughout the range. For both implant species, complete recrystallization of samples disordered up to the surface occurs for annealing only at temperatures above 2800 K. If a surface layer remains crystalline after implantation, recrystallization proceeds both from the bulk and from the surface, and crystallinity is restored at 2300 K. While hydrogen is known to be released at temperatures between 1100 and 1500 K, Mo remains within its original range distribution up to the temperature of complete recrystallization. At a temperature of 2300 K an ordering of the implanted Mo atoms with respect to the c axis is observed, indicating short-range migration within the range distribution. At 2800 K no more Mo could be found in the analyzed surface layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340997
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