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  • 1
    Electronic Resource
    Electronic Resource
    Nonlinear optical properties of metal-quantum-dot composites synthesized by ion implantation
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 91 (1994), S. 493-504 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0168-583X(94)96274-X
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  • 2
    Electronic Resource
    Electronic Resource
    Evolution of microstructure in nanocrystalline Mo-Cu thin films during thermal annealing (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2435-2440 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of microstructure in Mo-Cu thin films during annealing has been investigated by in situ sheet resistance measurements, ex situ x-ray diffraction, and in situ hot-stage as well as conventional transmission electron microscopy. Mo-Cu thin films, deposited on various glass substrates by magnetron sputtering at ∼30 °C, were supersaturated solid solutions of Cu in Mo with a nanocrystalline microstructure. The as-deposited films had large compressive residual stresses owing to the low homologous deposition temperature and low Ar pressure during deposition. Annealing results showed two distinct sets of microstructural changes occurring in the temperature ranges between ∼300 and 500 °C, and ∼525 and 810 °C. In the lower-temperature range, anisotropic growth of nanocrystallites was accompanied by stress relaxation without any observable phase separation. At temperatures greater than ∼525 °C, the metastable solid solution collapsed and Cu precipitated at the grain boundaries. Increasing temperature resulted in the coarsening of Cu precipitates and simultaneous growth of Mo grains. At temperatures greater than ∼700 °C, phase separation and grain growth approached completion. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360756
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  • 3
    Electronic Resource
    Electronic Resource
    GaAs to InP wafer fusion (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4227-4237 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents an analysis of the various properties of the fused interface between GaAs and InP. Interface dislocations are characterized by transmission electron microscopy. Bipolar electrical properties are studied by electron beam induced current measurements and by electrical measurements of fused diode and laser structures. Absorptive optical losses at the interface are estimated from measurements on fused Fabry–Perot resonators and optical scattering losses from interface roughness are estimated by atomic force microscopy. Finally a preliminary mechanical analysis of fracture patterns of fused mesas is presented. The results from our analysis are used to develop guidelines for the fabrication of fused optoelectronic devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359884
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  • 4
    Electronic Resource
    Electronic Resource
    Physical and optical properties of Cu nanoclusters fabricated by ion implantation in fused silica (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 708-715 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu clusters of nanometer dimensions were created by implantation of Cu ions into pure fused silica substrates at energies of 160 keV. The sizes and size distributions of the Cu clusters were measured by transmission electron microscopy, and were found to be determined by the ion-beam current during implantation. Optical-absorption spectra of these materials show the size-dependent surface plasmon resonance characteristic of noble-metal clusters. There are also significant size-dependent effects in both the nonlinear index of refraction and two-photon absorption coefficients. The distinctive variations in linear and nonlinear optical properties with Cu nanocluster sizes and size distributions affords potentially interesting possibilities for using these materials in nonlinear optical devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357814
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  • 5
    Electronic Resource
    Electronic Resource
    Structural, optical, and electrical properties of epitaxial chalcopyrite CuIn3Se5 films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1503-1510 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystal CuIn3Se5 epitaxial films have been synthesized on GaAs(001) by a hybrid sputtering and evaporation technique. The microstructure, microchemistry, and selected electrical and optical properties of the films have been investigated by scanning electron microscopy, energy dispersive x-ray spectroscopy, transmission electron microscopy, cathodoluminescence, optical absorption and reflection, and four-point probe resistivity measurements. The results showed that the CuIn3Se5 crystals have an ordered point defect structure, a band gap of ≥1.18 eV, an optical absorption coefficient of about 15 000 cm−1 at a photon energy of 1.35 eV, and a film resistivity of (approximately-greater-than)105 Ω cm. The results suggest the presence of band tails giving rise to subgap radiative recombination and absorption. Antiphase domain boundaries, stacking faults, and nanotwins were observed in the epitaxial layers and were reduced in number by rapid thermal annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357725
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  • 6
    Electronic Resource
    Electronic Resource
    Cu-Mo contacts to CuInSe2 for improved adhesion in photovoltaic devices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1185-1189 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electrical contact material consisting of an initially metastable solid solution of Cu in Mo is shown to provide improved adhesion to CuInSe2 when the Cu content exceeds ∼30 at. %. During physical-vapor deposition of CuInSe2 on these Cu-Mo solutions at elevated temperatures, phase separation occurs and Cu is released into the CuInSe2 layer. The Cu release begins at approximately 450 °C and increases in rate with increasing temperature. The release of Cu into the film along with consequent changes in the back contact are responsible for the improved adhesion. Similar adhesion improvements were obtained using annealed Cu-Mo layers in which phase separation occurred before CuInSe2 growth. Photovoltaic devices based on CuInSe2 on Cu0.3Mo0.7 back contacts showed improved performance and uniformity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356504
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  • 7
    Electronic Resource
    Electronic Resource
    A New Eudesmenoic Acid from Artemisia phaeolepis (1995)
    s.l. : American Chemical Society
    Journal of natural products 58 (1995), S. 288-290 
    Details
    ISSN: 1520-6025
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/np50116a023
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  • 8
    Electronic Resource
    Electronic Resource
    An intensity interferometer for soft x rays : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 2281-2283 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We designed and built an intensity interferometer to characterize the spatial coherence of a soft x-ray undulator beam. The beam source size and shape can be determined from the measured coherence function. The instrument is 400 mm long and is mounted on a standard 204-mm diameter flange. This compact design is readily adaptable to other beamlines with sources of sufficient spectral brightness. Details of the interferometer design and performance are presented. We anticipate that when this technique is mature, it will provide a useful diagnostic for high brightness x-ray beams. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145664
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  • 9
    Electronic Resource
    Electronic Resource
    Development of a hard x-ray imaging microscope : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 2287-2289 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A hard x-ray imaging microscope based on a phase zone plate has been developed and tested. The zone plate, with a 5 cm focal length and a 0.2 μm smallest linewidth, was used to image 8 keV x rays from the samples. The imaging microscope can be used to obtain nearly diffraction-limited resolution over the entire imaging field, and its resolution is almost independent of source size and source motions. We have tested such an imaging microscope, and a resolution of about 0.4 μm was obtained. The images were obtained with an exposure time of less than 1 min, for a magnification factor of 30 in the x rays. The x rays were then converted into visible light, and another 7 times magnification were obtained by using a lens system coupled to a charge coupled device camera. The results from the imaging microscope, and possible applications, will be discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145666
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  • 10
    Electronic Resource
    Electronic Resource
    X13A: A versatile soft x-ray undulator beamline : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1827-1829 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The undulator based beamline X13A at the National Synchrotron Light Source has been commissioned recently. The X13 undulator has an 8 cm period, and its first harmonic is in the energy range of 200–700 eV at the nominal ring energy of 2.5 GeV. The beamline uses horizontally deflecting optics. It consists of a SiC plane mirror, a water cooled entrance slit, a spherical grating, and two fixed exit slits. A flux of more than 1012 photons/s at 450 eV has been measured at X13A with an aluminum-oxide photodiode with a 200 μm entrance slit, a 500 μm exit slit, and a ring current of 242 mA. A VF3 absorption spectrum recorded at X13A shows the monochromator resolving power is at least 1000 at ∼500 eV with 30 μm entrance and exit slits, in agreement with calculations. The X13A beamline will be used for x-ray coherence studies, spectroscopy, and multilayer reflectivity measurements as well as for x-ray instrumentation diagnostics. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146461
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