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  • 1
    Electronic Resource
    Electronic Resource
    2-picosecond, GaAs photodiode optoelectronic circuit for optical correlation applications (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 3104-3106 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An ultrafast GaAs Schottky photodiode is monolithically integrated with a microwave detector. By using this new optoelectronic circuit in place of a nonlinear crystal in an optical correlation setup, the high-speed photodiode can measure laser pulse durations without using expensive sampling oscilloscopes. Key advantages are that this circuit works over a broad wavelength range and at low peak optical powers. The correlated temporal response of the circuit is measured to be 1.9 ps full width at half maximum. Due to its wavelength flexibility, cross correlation with different lasers may be performed with this single device.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107975
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Tapping mode atomic force microscopy using electrostatic force modulation (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2831-2833 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a simple tapping mode in atomic force microscopy using a capacitive electrostatic force. In this technique, the probe-to-sample distance is modulated by the capacitive force between tip and sample induced by a sinusoidal bias applied to the conductive probe instead of a conventional mechanical vibration. The electrostatic force versus distance curve of the probe indicates that it is necessary to use a rather stiff cantilever to prevent the snapping of the tip into the surface due to the adhesive force at the surface. We have succeeded in obtaining topographic images of a conductive surface as well as a soft polystyrene sample with a low tracking and lateral force through this method. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117333
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  • 3
    Electronic Resource
    Electronic Resource
    Scanning probe microscopy for testing ultrafast electronic devices (1996)
    Springer
    Optical and quantum electronics 28 (1996), S. 819-841 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Scanning force microscopy has been developed as a practical, non-contact probing technique for measuring voltage waveforms at internal nodes of integrated devices and circuits. Dynamic voltage contrast is achieved with high spatial and temporal resolution. The factors contributing to system bandwidth, voltage sensitivity and spatial resolution are discussed. Time-domain and frequency-domain measurements of silicon and gallium arsenide circuits are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00820151
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    Paper (German National Licenses)
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