Abstract
Scanning force microscopy has been developed as a practical, non-contact probing technique for measuring voltage waveforms at internal nodes of integrated devices and circuits. Dynamic voltage contrast is achieved with high spatial and temporal resolution. The factors contributing to system bandwidth, voltage sensitivity and spatial resolution are discussed. Time-domain and frequency-domain measurements of silicon and gallium arsenide circuits are presented.
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Hou, A.S., Nechay, B.A., Ho, F. et al. Scanning probe microscopy for testing ultrafast electronic devices. Opt Quant Electron 28, 819–841 (1996). https://doi.org/10.1007/BF00820151
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DOI: https://doi.org/10.1007/BF00820151