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  • 1
    Electronic Resource
    Electronic Resource
    The design of GaAs/AlAs resonant tunneling diodes with peak current densities over 2×105 A cm−2 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3345-3350 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A coherent transport model is described which accommodates bandstructure nonparabolicity by using a "local energy parabolic band approximation.'' The model and a knowledge of its limitations is used to design resonant tunneling diodes in the GaAs/AlAs material system with measured peak current densities of 2.5(2.8)×105 A cm−2 concurrent with peak-to-valley ratios as high as 1.8 (3.1) at room temperature (77 K).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348563
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  • 2
    Electronic Resource
    Electronic Resource
    Photonic band gaps with layer-by-layer double-etched structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6749-6753 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Periodic layer-by-layer dielectric structures with full three-dimensional photonic band gaps have been designed and fabricated. In contrast to previous layer-by-layer structures the rods in each successive layer are at an angle of 70.5° to each other, achieved by etching both sides of a silicon wafer. Photonic band-structure calculations are utilized to optimize the photonic band gap by varying the structural geometry. The structure has been fabricated by double etching Si wafers producing millimeter wave photonic band gaps between 300 and 500 GHz, in excellent agreement with band calculations. Overetching this structure produces a multiply connected geometry and increases both the size and frequency of the photonic band gap, in very good agreement with experimental measurements. This new robust double-etched structure doubles the frequency possible from a single Si wafer, and can be scaled to produced band gaps at higher frequencies. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363802
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  • 3
    Electronic Resource
    Electronic Resource
    Resonant tunneling diodes for switching applications (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 153-155 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rise times for simple pulse-forming circuits are presented. Switching times for present best devices are in the range of 5–15 ps. An equivalent circuit model for resonant tunneling diodes inclusive of space-charge effects and transit time effects in the depletion region is presented. From these models it is shown that switching times are limited by the device RC time constants and are relatively unaffected by the resonant state lifetime or depletion layer transit times. Appropriate figures of merit for switching applications are the device capacitance and peak current density. Less emphasis should be placed on improving the peak-to-valley ratio. Optimally designed devices which maximize the current density should be capable of switching in under 5 ps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101213
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  • 4
    Electronic Resource
    Electronic Resource
    2-picosecond, GaAs photodiode optoelectronic circuit for optical correlation applications (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 3104-3106 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An ultrafast GaAs Schottky photodiode is monolithically integrated with a microwave detector. By using this new optoelectronic circuit in place of a nonlinear crystal in an optical correlation setup, the high-speed photodiode can measure laser pulse durations without using expensive sampling oscilloscopes. Key advantages are that this circuit works over a broad wavelength range and at low peak optical powers. The correlated temporal response of the circuit is measured to be 1.9 ps full width at half maximum. Due to its wavelength flexibility, cross correlation with different lasers may be performed with this single device.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107975
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  • 5
    Electronic Resource
    Electronic Resource
    Investigation of In0.53Ga0.47As/AlAs resonant tunneling diodes for high speed switching (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1685-1687 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an investigation of In0.53Ga0.47As/AlAs resonant tunneling diodes designed for high speed switching applications. Experimental peak current densities are observed to increase with decreasing AlAs barrier thicknesses, in good agreement with a two band tunneling calculation, which includes the effects of strain and band bending. Swing voltages over the range 0.5–1.0 V are demonstrated to be controllable via the thickness of a lightly doped depletion layer. Estimated RC time constants are compared with intrinsic tunneling times for the samples studied. A sample with 6 monolayer AlAs barriers yields devices with peak current densities of 3.1×105 A/cm2 and peak-to-valley current ratios of 6:1. The minimum rise time in this sample is calculated to be limited by RC switching delays to 1.6 ps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108451
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  • 6
    Electronic Resource
    Electronic Resource
    Laser-micromachined millimeter-wave photonic band-gap cavity structures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1969-1971 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used laser-micromachined alumina substrates to build a three-dimensional photonic band-gap crystal. The rod-based structure has a three-dimensional full photonic band gap between 90 and 100 GHz. The high resistivity of alumina results in a typical attenuation rate of 15 dB per unit cell within the band gap. By removing material, we have built defects which can be used as millimeter-wave cavity structures. The resulting quality (Q) factors of the millimeter-wave cavity structures were as high as 1000 with a peak transmission of 10 dB below the incident signal. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114756
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  • 7
    Electronic Resource
    Electronic Resource
    Double-etch geometry for millimeter-wave photonic band-gap crystals (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1617-1619 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have designed and developed a new double-etch technique for fabricating three-dimensional millimeter-wave photonic band-gap crystals. This technique doubles the band-gap frequency obtainable from silicon wafers. By introducing overetching, the double-etch geometry allows one-way tuning of the midgap frequency. We have experimentally demonstrated this property by fabricating and testing structures with different overetch ratios. Terahertz spectroscopy techniques were used to measure photonic band-gap crystals with midgap frequencies ranging from 340 to 375 GHz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112929
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  • 8
    Electronic Resource
    Electronic Resource
    Micromachined millimeter-wave photonic band-gap crystals (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2059-2061 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a new technique for fabricating three-dimensional photonic band-gap crystals. Our method utilizes an orderly stacking of micromachined (110) silicon wafers to build the periodic structure. A structure with a full three-dimensional photonic band gap centered near 100 GHz was measured, with experimental results in good agreement with theoretical predictions. This basic approach described should be extendable to build structures with photonic band-gap frequencies ranging from 30 GHz to 3 THz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111736
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  • 9
    Electronic Resource
    Electronic Resource
    Reflection properties and defect formation in photonic crystals (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 743-745 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the surface reflection properties of a layer-by-layer photonic crystal. By using a Fabry–Perot resonant cavity analogy along with the reflection-phase information of the photonic crystal, we predicted defect frequencies of planar defect structures. Our predictions were in good agreement with the measured defect frequencies. Our simple model can also predict and explain double defect formation within the photonic band gap. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117877
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  • 10
    Electronic Resource
    Electronic Resource
    Defect structures in metallic photonic crystals (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3797-3799 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated metallic photonic crystals built around a layer-by-layer geometry. Two different crystal structures (face-centered-tetragonal and tetragonal) were built and their properties were compared. We obtained rejection rates of 7–8 dB per layer from both metallic crystals. Defect modes created by removing rods resulted in high peak transmission (80%), and high quality factors (1740). Our measurements were in good agreement with theoretical simulations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117002
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