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  • 11
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry 51 (1959), S. 1345-1348 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Biochemistry 22 (1983), S. 3178-3187 
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Biochemistry 26 (1987), S. 3340-3347 
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 6057-6059 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a technique to create very small semiconductor nanostructures, with sizes far beyond the limit of conventional optical lithography processes, by the use self-assembling diblock copolymers as nanolithographic masks. Quantum structures with very high aspect ratio of 1:10 were fabricated by dry etching. In a first step, so-called diblock copolymer micelles were generated in a toluene solution. These micelles were loaded by a noble-metal salt. After dipping a substrate into this solution, a monolayer of ordered micelles is generated, covering almost the complete surface. After treatment in a hydrogen plasma all of the organic components are removed and only crystalline metal clusters of (approximate)12 nm size remain. This metal cluster mask can be used directly in a chlorine dry etching process to etch cylinders in GaAs and its alloys of In and Al. It is also possible to etch through a quantum well layer underneath the surface in order to produce quantum dots. The resulting nanostructures were investigated by scanning force microscopy, by high resolution transmission electron microscopy, and also by low temperature photoluminescence spectroscopy. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7115-7124 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The discharge behavior of silicon-oxide-nitride-oxide-semiconductor nonvolatile memory transistors is investigated for a range of programming and storage temperatures spanning −55 °C to 200 °C. A number of empirical observations strongly limit the nature of the mechanisms that govern charge injection and decay. Both electrons and holes contribute to the charge storage properties of the transistors, and the decay properties of both are thermally activated with a continuous distribution of activation energies (trap depths). Charge decay, for both charge states, is negligibly limited by mechanisms other than those which are strongly thermally activated. The programming temperature, relative to the storage temperature, significantly impacts the retention time of the excess electron state, while not affecting the long term decay of the excess hole state. The experimental results also have significant implications regarding proper retention screening techniques and nonvolatile ROM programming techniques.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3196-3198 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of 1/f noise measurements in n-Si and p-Si between room temperature and liquid-nitrogen temperature are presented. The temperature dependence of the noise in the n-Si samples appears fairly complex, and it does not appear that one can find a simple model to explain it. Two different heat treatments of p-type samples were used. In those treated at 950 °C the noise declines with increasing reciprocal temperature in a manner similar to that found by other investigators. For p-type samples treated at 550 °C the noise at room temperature is two orders of magnitude smaller than for the high-temperature samples and the temperature dependence is much smaller.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6463-6471 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A physically based methodology is developed for modeling the behavior of electrical circuits containing nonideal ferroelectric capacitors. The methodology is illustrated by modeling the discrete ferroelectric capacitor as a stacked dielectric structure, with switching ferroelectric and nonswitching dielectric layers. Electrical properties of a modified Sawyer–Tower circuit are predicted by the model. Distortions of hysteresis loops due to resistive losses as a function of input signal frequency are accurately predicted by the model. The effect of signal amplitude variations predicted by the model also agree with experimental data. The model is used as a diagnostic tool to demonstrate that cycling degradation, at least for the sample investigated, cannot be modeled by the formation of nonswitching dielectric layer(s) or the formation of conductive regions near the electrodes, but is consistent with a spatially uniform reduction in the number of switching dipoles.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4555-4568 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A predictive formalism is developed that is applicable to the large class of activated physical systems described by a differential equation of the generic form: ∂n(φ,t)/∂t =−n(φ,t)F(t) exp(−(φ−R(t))/A(t)). Practical techniques to predict the behavior of activated physical systems for arbitrary time-dependent environments are both intuitively and mathematically developed. Useful techniques to experimentally determine the initial distribution of activation energies, utilizing arbitrary time-dependent laboratory environments, are presented. A number of fundamental results regarding the correct use and interpretation of common diagnostic techniques, such as Arrhenius plots, are derived. It is shown how the predictive results significantly enhance the ability to quantitatively evaluate the reliability of physical systems whose rate-limiting mechanisms are activated processes obeying the above differential equation. Specific issues regarding integrated circuit reliability are examined as potential applications of this predictive formalism, including time-dependent dielectric breakdown, metal electromigration, nonvolatile memory retention, annealing of radiation-induced trapped charge, and thin ferroelectric film switching properties.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4569-4576 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is presented which accurately predicts the threshold voltage decay of both the excess electron and excess hole logic states of silicon-nitride-oxide-silicon nonvolatile memory transistors in thermally varying environments. The model predictions require as inputs the initial occupied trap distributions for both trapped holes and trapped electrons. A technique is presented to determine all model parameters, including the initial occupied trap distributions, by performing a single practical experiment with a specific thermal scenario. Once the model parameters are determined by this single experiment, the threshold voltage is predicted (with no adjustable parameters) for arbitrary time dependent thermal environments. Retention experiments are performed for a wide range of thermal environments which are changed during the charge decay process. The accuracy of the model predictions is verified by experimental data.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2305-2307 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two versions of micro-scanning tunneling microscopes (micro-STMs) have been fabricated. The integrated micro-STMs are fabricated from single crystal silicon using the high-aspect-ratio SCREAM process. Each micro-STM includes integrated xy comb drive actuators and a torsional z actuator with integrated cantilever and tip. One micro-STM measures approximately 200 μm on-a-side and is an example of a STM element for a STM array architecture. Another, larger micro-STM/atomic force microscope measures 2 mm on-a-side including a 1 mm long cantilever with a 20 nm diam tip. We demonstrate the operation of this larger STM by obtaining a STM image of a 200 nm metal conductor on a silicon chip. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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