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  • American Institute of Physics (AIP)  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5452-5452 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cubic Laves phase alloy YFe2 forms four types of hydrides, YFe2Hx: β1, β2 (hexagonal) of 1.2〈x〈1.6, γ (hexagonal) of 2.8〈x〈3.45, and δ (orthorhombic) of 3.7〈x. The β1 and β2 hydrides are formed in the hydrogen absorption below and above 500 K. The deuterides YFe2Dx have been prepared by deuterium absorption at various temperatures for YFe2 powders of diameters less than 0.3 mm. The formed samples are mixtures of main and extra deuteride phases. The x-ray and magnetization measurements in a magnetic field of 10.6 kOe showed five types of ferromagnetic deuterides with Curie temperatures of about 100 K (δ1), 300 K (δ2), 380 K (γ), 300–380 K (β1), and 540 K (amorphous). The extrapolated values of magnetization at 0 K are 3.5μB/YFe2Dx. The crystal structures are as follows: δ1, hexagonal, a=0.57 nm, c=2.74 nm; δ2, cubic, a=0.79 nm; γ, hexagonal, a=0.56 nm, c=2.63 nm; and β, hexagonal (a=0.53 nm, c=0.87 nm)–(a=0.51 nm, c=0.82 nm). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 180-182 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the quasi-two-dimensional exciton in ZnSe/ZnxMg1−xSySe1−y (x=0.85, y=0.21) single quantum wells (SQWs) by photoluminescence and photoluminescence excitation spectroscopy. Self-consistent calculations of the peak energies for a series of SQWs give the conduction band discontinuity ΔEc=0.40ΔEg and the binding energy of the n=1 heavy-hole exciton Eb(hh1)=22.1 meV for an 8 nm well width. We believe that the binding energy of the n=1 heavy-hole exciton is smaller than the LO phonon energy our samples resulting in a very large exciton-phonon interaction strength observed through the broadening of the exciton resonance with temperature. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3421-3423 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated Si-doped GaN epitaxial layers on a (0001)-sapphire substrate using a HCl vapor-phase etching technique, scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. Three kinds of distinctive etch pits correspond to three different types of threading dislocations, edge, mixed, and screw types. Photoluminescence intensity increases with the decrease in the number of etch pits corresponding to mixed and screw dislocations. The number of etch pits corresponding to edge dislocations, however, did not change. We concluded, therefore, that threading dislocations having a screw-component burgers vector act as strong nonradiative centers in GaN epitaxial layers, whereas edge dislocations, which are the majority, do not act as nonradiative centers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1482-1484 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied vacancy type defects in Ga-doped ZnSe films grown by molecular beam epitaxy using an energy-variable monoenergetic positron beam. We found that the concentration of negative charged vacancies, such as Zn vacancies, increases as the Ga atom concentration increases. This result indicates that the doping by Ga atoms induces the formation of Zn vacancies in a ZnSe film. We believe that these defects will cause the saturation of active carriers in n-type ZnSe films.
    Type of Medium: Electronic Resource
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