Description: The foraminifera and geochemical element records from the Core CS2 in the center of the Okinawa Trough (OT) revealed a history of current circulation and bottom redox conditions over the last 19 Ka. During the last glaciation, the few Kuroshio Current (KC) and tropical/subtropical species components, the shoaled depth of thermocline (DOT) and high infaunal foraminifera, together suggest the hypoxia in the isolated and semiclosed OT might be related to an absence/shift of the KC. Furthermore, the hypoxia variations in three episodes coincided with changes in the North Pacific Intermediate Water (NPIW), as stronger hypoxia and enhanced NPIW occurred in the Heinrich Stadia 1 and Younger Dryas periods, and rapidly decreasing hypoxia corresponded with weaker NPIW ventilation in the Bølling/Allerød period. Previously recorded hypoxia in the OT occurred broadly at a water depth of between ~1,300 and 1,800 m. Meanwhile, the lowest productivity precluded the possibility of hypoxia caused by organic matter consumption. We thereby infer the enhanced glacial NPIW might be another reason for the hypoxia. After the postglaciation, the OT transitioned into a fully oceanic environment and was reoccupied by main pathway of the KC. This reoccupation greatly alleviated the hypoxia via weakening stratification and increasing vertical mixing. Evolution research of current circulation and bottom redox conditions can help in understanding the changes in the storage/release of carbon as the paleoclimate changed. Moreover, the variations in bottom redox conditions in the OT offer a possible informative window for understanding the influence of glacial NPIW in the mid-latitude zone.

Description: The monthly air temperature in 1153 stations and precipitation in 1202 stations in China and neighboring countries were collected to construct a monthly climate dataset in China on 0.025 ° resolution (approximately 2.5 km) named LZU0025 dataset designed by Lanzhou University (LZU), using a partial thin plate smoothing method embedded in the ANUSPLIN software. The accuracy of the LZU0025 was evaluated from analyzing three aspects: 1) Diagnostic statistics from surface fitting model in the period of 1951-2011, and results show low mean square root of generalized cross validation (RTGCV) for monthly air temperature surface (1.1 °C) and monthly precipitation surface (2 mm1/2) which interpolated the square root of itself. This indicate exact surface fitting models. 2) Error statistics based on 265 withheld stations data in the period of 1951-2011, and results show that predicted values closely tracked true values with mean absolute error (MAE) of 0.6 °C and 4 mm and standard deviation of mean error (STD) of 1.3 °C and 5 mm, and monthly STDs presented consistent change with RTGCV varying. 3) Comparisons to other datasets through two ways, one was to compare three indices namely the standard deviation, mean and time trend derived from all datasets to referenced dataset released by the China Meteorological Administration (CMA) in the Taylor diagrams, the other was to compare LZU0025 to the Camp Tibet dataset on mountainous remote area. Taylor diagrams displayed the standard deviation derived from LZU had higher correlation with that induced from CMA (Pearson correlation R=0.76 for air temperature case and R=0.96 for precipitation case). The standard deviation for this index derived from LZU was more close to that induced from CMA, and the centered normalized root-mean-square difference for this index derived from LZU and CMA was lower. The same superior performance of LZU were found in comparing indices of the mean and time trend derived from LZU and those induced from other datasets. LZU0025 had high correlation with the Camp dataset for air temperature despite of insignificant correlation for precipitation in few stations. Based on above comprehensive analyses, LZU0025 was concluded as the reliable dataset.

Description: The accuracy of dielectronic recombination (DR) data for astrophysics related ions plays a key role in astrophysical plasma modeling. The absolute DR rate coefficient of Fe 17+ ions was measured at the main cooler storage ring at the Institute of Modern Physics, Lanzhou, China. The experimental electron-ion collision energy range covers the first Rydberg series up to n = 24 for the DR resonances associated with the ##IMG## [http://ej.iop.org/images/1674-1137/42/6/064001/cpc_42_6_064001_ieqn1.gif] {${}^{2}P_{1/2}\to {}^{2}P_{3/2}{\rm{\Delta }}n=0$} core excitations. A theoretical calculation was performed by using FAC code and compared with the measured DR rate coefficient. Overall reasonable agreement was found between the experimental results and calculations. Moreover, the plasma rate coefficient was deduced from the experimental DR rate coefficient and compared with the available results from the literature. At the low energy range, sign...

Description: Strong room temperature electroluminescence with two emission peaks at around 0.786 eV and 0.747 eV from Ge n+/p shallow junctions was reported. The peak at around 0.786 eV comes from direct band luminescence (DBL) in n + Ge regions, while the peak fixing at 0.747 eV is resulted from defects induced by ion implantation. Heavy n-type doping in Ge renders realization of strong defect-related luminescence (DRL) feasible. The peak intensity ratio of DRL/DBL decreases with increase of injection current since more electrons are filled in Γ valley. Above all, the Ge n+/p shallow junction is fully compatible with the source and drain in Ge metal-oxide-semiconductor field effect transistors.

Description: The down-scaling of nanocrystal Si (nc-Si) floating gate memory must overcome the challenge of leakage current induced by the conventional ultra-thin tunnel layer. We demonstrate that an improved memory performance based on the Al/SiN x /nc-Si/Al 2 O 3 /Si structure can be achieved by adopting the Al 2 O 3 tunnel layer fabricated by plasma-enhanced atomic layer deposition. A larger memory window of 7.9 V and better retention characteristics of 4.7 V after 10 5  s can be obtained compared with the devices containing a conventional SiO 2 tunnel layer of equivalent thickness. The capacitance-voltage characteristic reveals that the Al 2 O 3 tunnel layer has a smaller electron barrier height, which ensures that more electrons are injected into the nc-Si dots through the Al 2 O 3 /Si interface. The analysis of the conductance-voltage and high-resolution cross-section transmission microscopy reveals that the smaller nc-Si dots dominate in the charge injection in the nc-Si floating gate MOS device with an Al 2 O 3 tunnel layer. With an increase of the nc-Si size, both nc-Si and the interface contribute to the charge storage capacity and retention. The introduction of the Al 2 O 3 tunnel layer in nc-Si floating gate memory provides a method to achieve an improved performance of nc-Si floating gate memory.