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  • American Institute of Physics (AIP)  (14)
  • 2000-2004  (14)
  • 2000  (14)
Document type
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Years
  • 2000-2004  (14)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Exchange anisotropy of epitaxial Fe/MnPd bilayers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2054-2057 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anisotropy contributions in epitaxial Fe/MnPd bilayers were analyzed in this study. It was found that due to ferromagnetic–antiferromagnetic interfacial exchange coupling, large uniaxial and cubic anisotropy contributions are also induced, in addition to the unidirectional anisotropy. These contributions play an essential role in the magnetization reversal process of the system, in which unusual reversal processes were found upon some fields orientations. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305907
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  • 2
    Electronic Resource
    Electronic Resource
    Perpendicular anisotropy in the amorphous TbCo/Si multilayers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6845-6847 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The TbCo/Si multilayers prepared by the rf magnetron sputtering system with various Si thickness have been investigated. X-ray diffraction, magnetic measurement and Kerr rotation have been performed. No antiferromagnetic coupling was found for the system. With the thickness of Si layer tSi increasing, the perpendicular anisotropy constant Ku, and the saturation magnetization Ms decreased rapidly. It was assumed that Co2Si and Tb had been formed in the interfacial zone between TbCo and Si layers due to the interlayer diffusion. The decreasing of Ms is attributed to the decreasing of the effective thickness of magnetic layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372861
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  • 3
    Electronic Resource
    Electronic Resource
    Some features of chaos and oscillations in plasma-filled diodes (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 3976-3982 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The physical background concerning the existence of four dynamical states (stable, oscillatory, chaotic and unstable) in a plasma-filled diode has been investigated in some detail, the results being presented with the help of charge density and other three-dimensional graphs. It has been established that the determining factor is a dynamic ions/electrons charge-balance in the interelectrode space. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289028
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  • 4
    Electronic Resource
    Electronic Resource
    A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4558-4562 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Beryllium implantation induced defects in 6H-SiC pn junctions have been investigated by deep level transient spectroscopy. Five defect centers labeled BE1, BE2, BE3, BE4, and BE5 have been detected in the temperature range 100–450 K. A comparative study has also been performed in low beryllium doped n-type 6H-SiC, which proved that the BE1, BE2, and BE3 centers are electron traps located at 0.34, 0.44, and 0.53 eV, respectively, below the conduction band edge. On the other hand, the BE4 and BE5 centers have been found to be hole traps which are situated at 0.64 and 0.73 eV, respectively, above the valence band edge. Possible defect configurations associated with these deep levels are discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287232
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of CaTiO3-modified Pb(Mg1/3Nb2/3)O3 dielectrics (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2516-2519 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb(Mg1/3Nb2/3)O3 dielectrics modified by CaTiO3 were prepared by a solid-state reaction method, and microstructure analyses were performed together with the dielectric characterization. Solid solutions with cubic perovskite structures were obtained for compositions of 0–60 mol %CaTiO3, and the orthorhombic perovskite structures were observed for compositions near to the end member of CaTiO3 in the present system. The dielectric loss and temperature coefficient could be pronouncedly reduced by incorporating CaTiO3 into Pb(Mg1/3Nb2/3)O3. Low-loss dielectrics (tan δ∼10−4 at 1 MHz) with dielectric constants of 120–262 and small temperature coefficient (τε∼−960 to −1100 ppm/ °C) were obtained, and further improvement of dielectric properties could be expected through structural modifications. Good microwave dielectric properties, ε=172.6 and Qf=1930 GHz, were achieved in a composition of 0.4Pb(Mg1/3Nb2/3)O3/0.6CaTiO3, where the temperature coefficient of resonant frequency τf was estimated as 470 ppm/ °C. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372212
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  • 6
    Electronic Resource
    Electronic Resource
    Low-frequency electrical noise of high-speed, high-performance 1.3 μm strained multiquantum well gain-coupled distributed feedback lasers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6746-6751 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of low-frequency electrical noise (LFN) in an in-phase gain-coupled distributed feedback lasers with etched quantum-well active-layers emitting at 1.3 μm wavelength have been conducted. In particular, the injected current dependence of LFN is investigated over a wide range of injection current (from 10−2 μA to 60 mA). Pure 1/f noise spectra were observed in all measurements. The current dependence of the 1/f noise strongly correlates to the I–V characteristics. We find that noise from different mechanisms dominates when the lasers operate in different ranges of injection currents. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1321778
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  • 7
    Electronic Resource
    Electronic Resource
    Hydrodynamic damping of tip oscillation in pulsed-force atomic force microscopy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3462-3464 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Although proven a powerful technique for mapping adhesion and surface mechanical properties at high lateral resolution, pulsed-force (PF) atomic force microscopy (AFM) is problematic in liquid, due to heavy hydrodynamic damping of cantilever vibration. We present computer simulations using the simple harmonic oscillation model to explore the changes of deflection signal profile that occur from air to liquid environment. In agreement with experimental results, we find that oscillation phase lag plays a key role in the signal profile. When imaging in liquid, the deflection caused by liquid oscillation may exceed that caused by tip-sample contact repulsion and adhesion, which brings particular consideration for PF–AFM imaging in liquid. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1325395
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical properties of ZrO2 gate dielectric on SiGe (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 502-504 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the electrical properties of a high dielectric constant (high-k) material, ZrO2, deposited directly on SiGe, without the use of a Si buffer layer or a passivation barrier. ZrO2 thin films of equivalent oxide thickness (EOT) down to 16.5 Å were deposited on strained SiGe layers by reactive sputtering. Results indicate that ZrO2 films on SiGe have good interfacial properties and low leakage currents. Sintering in forming gas at 350 °C for 1 h could further improve the film quality. Although threshold voltage stability and dielectric dispersion become a concern for thick ZrO2 films, thin ZrO2 films of EOT less than 20 Å exhibit excellent electrical properties making them a good candidate for SiGe applications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125801
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  • 9
    Electronic Resource
    Electronic Resource
    Switching properties of SrBi2Ta2O9 thin films produced by metalorganic decomposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 369-371 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The process of polarization reversal in a SrBi2Ta2O9 (SBT) thin film capacitor produced by a metalorganic decomposition method was investigated. The switching time (100–600 ns) and the reversible polarization have been measured at different voltages in the range of 0–5 V. It was found that by annealing the SBT sample in AR atmosphere at 400 °C, the switching times were significantly reduced. This indicates that oxygen vacancies in the film speed up nucleation and growth of new domains. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125757
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  • 10
    Electronic Resource
    Electronic Resource
    Asymmetry of coercivity dependence on temperature in exchange-biased FeMn/Co bilayers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2731-2733 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the coercivity in biased FeMn/Co bilayers is investigated. An asymmetric behavior of the left and right coercivity with varying temperature is observed. The asymmetry can be understood by taking into account the variation of the spin arrangements in the antiferromagnetic layer. The calculated results are in agreement with the experimental ones qualitatively. All these results suggest that the magnetization reversal mechanisms are different for increasing and decreasing fields. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319511
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