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  • 1
    Electronic Resource
    Electronic Resource
    Selective growth of (100)-, (110)-, and (111)-oriented MgO films on Si(100) by pulsed laser deposition (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5728-5734 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective growth of singly oriented (110)-, (100)-, and (111)-MgO films on Si(100) substrates were obtained by pulsed laser deposition. The effects of deposition temperature, ambient oxygen pressure, and etching of the substrate on the structural properties of the films were studied. It is found that the crystalline orientations of the MgO films are determined at the initial deposition stage by the substrate temperature only. The ambient pressure during deposition and etching of the Si substrates only effect the crystalline quality. Both (110)- and (111)-oriented films show granular grain structures. The (100)-oriented films grown on etched Si substrates display similar granular structures. Those deposited on nonetched Si substrates, however, reveal distinctive columnar grains. The observed phenomena are discussed based on the theory of crystal growth. The mechanism of the orientation selection is attributed to the energy balance between the surface and the interface energies. The varied grain structures are explained by considering the mobility of adatoms in different situations. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1461059
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  • 2
    Electronic Resource
    Electronic Resource
    Laser ablation of solid substrates in water and ambient air (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2400-2403 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser ablation of solid substrates in ambient air and under water is investigated. It is found that the laser ablation rate is highly enhanced by the water film. A wide-band microphone is used to detect the audible acoustic wave generated during laser ablation. Peak-to-peak amplitude of the acoustic wave recorded in water confinement regime (WCR) is greater than that recorded in ambient. It is assumed that the plasma generated in WCR induces a much stronger pressure. This high-pressure, high-temperature plasma results in a much higher ablation rate. Theoretical calculation is also carried out to verify this assumption. By proper calibration, acoustic wave detection can be used as a real-time monitoring of the laser ablation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1342200
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  • 3
    Electronic Resource
    Electronic Resource
    Low-frequency electrical noise of high-speed, high-performance 1.3 μm strained multiquantum well gain-coupled distributed feedback lasers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6746-6751 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of low-frequency electrical noise (LFN) in an in-phase gain-coupled distributed feedback lasers with etched quantum-well active-layers emitting at 1.3 μm wavelength have been conducted. In particular, the injected current dependence of LFN is investigated over a wide range of injection current (from 10−2 μA to 60 mA). Pure 1/f noise spectra were observed in all measurements. The current dependence of the 1/f noise strongly correlates to the I–V characteristics. We find that noise from different mechanisms dominates when the lasers operate in different ranges of injection currents. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1321778
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  • 4
    Electronic Resource
    Electronic Resource
    Pulsed laser deposition and characterization of optical waveguiding (Pb,La)(Zr,Ti)O3 thin films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2729-2731 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ferroelectric (Pb,La)(Zr,Ti)O3 optical waveguiding thin films have been prepared on MgO coated (100)LiF substrates by pulsed laser deposition. X-ray θ-2θ scans revealed that the films are single-phase pseudocubic perovskite and highly 〈100〉 textured. The surface chemical composition of the as-grown films was determined by x-ray photoelectron spectroscopy. The ferroelectric properties of the films as grown on Pt/Ti coated silicon were demonstrated by using a modified Sawyer–Tower circuit, and the optical waveguiding properties of the films were characterized by using a rutile prism coupling method. The as-grown films have an average transmittance of 75% in the wavelength range of 400–2000 nm and a refractive index of 2.2 at 632.8 nm close to the bulk PLZT. The distinct m lines of the guided TM and TE modes of the films as grown on MgO coated LiF substrates have been observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114307
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  • 5
    Electronic Resource
    Electronic Resource
    Computer correction for distorted STM images (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 5649-5652 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In quite a few cases, the geometric distortion of a scanning tunneling microscope (STM) image is essentially caused by the nonorthogonal scanning. A physical and mathematical model is proposed to correct such distortion, giving a satisfactory result.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143395
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  • 6
    Electronic Resource
    Electronic Resource
    Low-frequency noise in a thin active layer α-Si:H thin-film transistors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7952-7957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency noise of hydrogenated-amorphous-silicon (α-Si:H) thin-film transistors (TFTs) with a thin active layer and an inverted staggered device structure operating in the conducting mode has been investigated. Pure 1/f-noise spectra were observed. The results show that the physical location of the noise in α-Si:H TFTs is different from that in crystalline metal–oxide–semiconductor field-effect transistors. The noise contributions from the channel and interface have been determined for the device operating in different modes. The 1/f noise of α-Si:H TFTs stems from the channel when the device is operated in the linear region at high gate voltages. However, the 1/f noise of α-Si:H TFTs generated at the interface becomes significant when the device is operated in the saturation region. The interface noise can be explained by the number fluctuation model (ΔN model). The channel noise can be explained by either the ΔN model or the mobility fluctuation model (Δμ model). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370614
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  • 7
    Electronic Resource
    Electronic Resource
    Hysteretic ac losses in high-temperature superconductors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 386-388 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theory of ac losses in the type II superconductors in the frame of the critical state model [J. Thompson, M. Maley, and J. R. Clem, J. Appl. Phys. 50, 3531, 3518 (1979)] is applied to high Tc materials (Y-Ba-Cu-O) assuming an exponential drop of the critical current density Jc with both magnetic field and temperature. The dependence of dc magnetic field (H1) at which ac loss minimum occurs on an amplitude of ac magnetic field (h0) and on temperature Tc is calculated numerically. The two maxima of the total ac losses are found: one of them is very close to Tc and second maximum below Tc shifts to lower temperatures with increasing ac or dc magnetic field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101454
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  • 8
    Electronic Resource
    Electronic Resource
    Doping dependence of low-frequency noise in polycrystalline SiGe film resistors (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 516-518 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Study on low-frequency noise in polycrystalline SiGe material is conducted. We use poly-Si0.7Ge0.3 resistors that were deposited by low-pressure chemical vapor deposition and were doped with different concentrations of boron by ion implantation. The doping dependence of low-frequency noise of poly-SiGe is similar to that of poly-Si. However, the value of α for poly-SiGe is one order smaller than that for poly-Si. We found that decreasing boundary scattering at higher doping concentration results in increased mobility, and decreased 1/f noise parameter α. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124401
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  • 9
    Electronic Resource
    Electronic Resource
    Layered defective lanthanum titanate thin films prepared by pulsed laser ablation of potassium lanthanum titanate ceramics (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 191-193 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of Lanthanum titanate have been prepared on SiO2 coated Si and fused silica substrates by excimer ultraviolet laser ablation of potassium lanthanum titanate ceramics (K2La2Ti3O10). X-ray θ–2θ scans revealed that the films as-grown at a substrate temperature of 750–850 °C were single phase defective perovskite, and exhibited superstructure line in addition to the lines expected for the foundamenal perovskite structure. The films can be produced by escaping of potassium from K2La2Ti3O10 and the superstructure line observed was considered to arise from the ordered arrangement of the A-site vacancies. The chemical compositions of the films were determined by x-ray photoelectron spectroscopy (XPS). Optical waveguiding properties were demonstrated by m-line measurement using a rutile prism coupling method. The as grown films are colorless and transparent, and have the effective refractive index of 1.917 for TE modes at 632.8 nm. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117368
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  • 10
    Electronic Resource
    Electronic Resource
    Investigation of neutralized (NH4)2S solution passivation of GaAs (100) surfaces (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3081-3083 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchrotron radiation photoelectron spectroscopy combined with scanning electron microscopy (SEM) and gravimetry has been used to study GaAs (100) surfaces treated with a neutralized (NH4)2S solution. Compared to the conventional basic (NH4)2S solution treatment, a thick Ga sulfide layer and strong Ga–S bond were formed on the GaAs surface after dipping GaAs wafers in a neutralized (NH4)2S solution. Gravimetric data show that the etching rate of GaAs in the neutralized (NH4)2S solution is about 15% slower than that in the conventional (NH4)2S solution. From SEM observation, fewer etching pits with smaller sizes were found on the neutralized (NH4)2S-treated GaAs surface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120252
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