Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 1128-1130
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
The dependence of free-carrier lifetime on erbium concentration has been measured in molecular-beam epitaxial GaAs epilayers doped with erbium. A gradual reduction in the lifetime is observed with increased dopant incorporation. For a high doping concentration in the range of 1019 cm−3 or greater, a carrier lifetime of ∼1 ps is obtained. Due to the high resistivity of these epilayers, they can also be used as a photoconductive switch, with good responsivity. This leads to new and novel applications for rare-earth doped III-V semiconductors.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.108764
Permalink
|
Standort |
Signatur |
Einschränkungen |
Verfügbarkeit |