In:
Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 1109 ( 2015-6), p. 461-465
Abstract:
Performance of lead titanate, (PbTiO 3 ) thin films have been successfully investigated on microstructural properties, I-V characteristic, dielectric properties, and ferroelectric properties. PbTiO 3 offers variety of application as transducer, ferroelectric random access memory, transistor, high performance capacitor, sensor, and many more due to its ferroelectric behavior. Preparation of the films are often discussed in order to improve the structural properties, like existence of grain boundaries, particle uniformity, presents of microcrack films, porosities, and many more. Yet, researchers still prepare PbTiO 3 thin films at high crystallization temperature, certainly above than 600 ̊C to obtain single crystal perovskite structure that would be the reason to gain high spontaneous polarization behavior. Although this will results to high dielectric constant value, the chances that leads to high leakage current is a major failure in device performance. Thus, preparation the thin films at low annealing temperature quite an essential study which is more preferable deposited on low-cost soda lime glass. The study focuses on low annealing temperature of PbTiO 3 thin films through sol-gel spin coating method and undergo for dielectric and I-V measurements.
Type of Medium:
Online Resource
ISSN:
1662-8985
DOI:
10.4028/www.scientific.net/AMR.1109
DOI:
10.4028/www.scientific.net/AMR.1109.461
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2015
detail.hit.zdb_id:
2265002-7
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