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  • 1
    Electronic Resource
    Electronic Resource
    Optical properties of InAs self-organized quantum dots in n–i–p–i GaAs superlattices (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2035-2037 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of InAs quantum dots in n–i–p–i GaAs superlattices are investigated by photoluminescence (PL) characterization. We have observed an anomalously large blueshift of the PL peak and increase of the PL linewidth with increasing excitation intensity, much smaller PL intensity decrease, and faster PL peak redshift with increasing temperature as compared to conventional InAs quantum dots embedded in intrinsic GaAs barriers. The observed phenomena can all be attributed to the filling effects of the spatially separated photogenerated carriers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126246
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  • 2
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    Angle-dependent modulated spectral peaks of proton beams generated in ultrashort intense laser-solid interactions (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-09-25
    Description: Proton acceleration from 4  μ m thick aluminum foils irradiated by 30-TW Ti:sapphire laser pulses is investigated using an angle-resolved proton energy spectrometer. We find that a modulated spectral peak at ∼0.82 MeV is presented at 2.5° off the target normal direction. The divergence angle of the modulated zone is 3.8°. Two-dimensional particle-in-cell simulations reveal that self-generated toroidal magnetic field at the rear surface of the target foil is responsible for the modulated spectral feature. The field deflects the low energy protons, resulting in the modulated energy spectrum with certain peaks.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 3
    Electronic Resource
    Electronic Resource
    Ion-beam-assisted deposition of ferroelectric PbTiO3 films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2896-2899 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric PbTiO3 films were deposited by ion-beam-assisted deposition (O2+Ar 75–150 eV). The effects of ion bombardment on the Pb/Ti ratio and the structures of the film are discussed. For a given target-substrate distance and substrate temperature, the Pb/Ti ratio decreased with increasing bombarding beam energy. Compared with the films deposited without ion bombardment, the deposition rate was increased under ion bombardment, which is attributed to an increase in the surface reaction rate. The crystal grains are larger for films deposited under ion bombardment, which implies that ion bombardment enhances the surface mobility of adatoms and hence the growth kinetics of the growing films. Dielectric and ferroelectric properties of the as-deposited films are also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354644
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  • 4
    Electronic Resource
    Electronic Resource
    A novel model of "new donors'' in Czochralski-grown silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 954-957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new model of "new donors'' is presented, based on electrical, infrared measurements, transmission electron microscopy, and high-resolution electron microscopy observations on Czochralski-grown silicon single crystals containing "new donors.'' In this model, the electrical activity of "new donors'' originates from the uncoordinated Si dangling bonds on small dislocation loops resulting from oxygen precipitation. In comparison with other models, the present model can better explain the experimental results of the heat treatment Czochralski-grown Si wafers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346659
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  • 5
    Electronic Resource
    Electronic Resource
    The behavior of the spontaneous resistive anisotropy near a ferromagnetic and a reentrant transition (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4844-4846 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the spontaneous resistive anisotropy (SRA) are presented at 1.5 and 4.2 K on numerous ferromagnetic PdNi alloys and on a reentrant (PdFe)Mn sample. At 1.5 K the SRA in PdNi is shown to exhibit a power-law dependence on reduced composition of the form (1−c/c0)Δ, where c0=2.25(±0.05) at. % Ni is the critical concentration necessary to establish a ferromagnetic ground state, and the exponent Δ is estimated at 2.25(±0.1). In the archetypal reentrant system (Pd99.65Fe0.35)95Mn5 [Tc=9.30(±0.02) K, TSG=4.07 (±0.05)K from ac susceptibility data] the longitudinal and transverse magnetoresistance is strong and negative at both 4.2 and 1.5 K, and as a result the very small SRA is difficult to extract with any precision. Consequently, there is no clear indication from this particular transport coefficient of the transverse freezing predicted to occur at TSG in this system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344755
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  • 6
    Electronic Resource
    Electronic Resource
    High resolution carrier temperature and lifetime topography of semi-insulating GaAs using spatially and spectrally resolved photoluminescence (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1430-1434 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature Te of photoexcited carriers in semi-insulating GaAs wafers is determined with high lateral resolution by topographic measurement of the spectrally selected band-to-band recombination luminescence intensity IPL. It is also calculated from a detailed balance between carrier excitation and recombination, taking into account optical phonon, electron-electron, piezoelectric, and acoustic phonon scattering processes. Comparison of the experimental and theoretical Te data yields the lifetime τ of the photoexcited carriers, which is thus obtained without time-resolved measurement. The lifetime results are corroborated by comparison of the measured and calculated dependence of Te on the laser excitation power. The relation between Te and τ for given excitation power allows for the generation of two-dimensional high-resolution lifetime topograms. The correlation with conventional IPL topograms is direct, duplicating the lateral cellular pattern with comparable fluctuation amplitude. From these properties, it is inferred that τ is dominantly determined by inhomogeneously distributed nonradiative recombination centers. Their concentration is low in the walls of the dislocation network and high in the interior of the cells. The statistical evaluation of Te topograms allows for an application-oriented comparison of the quality and homogeneity of GaAs wafers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353241
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  • 7
    Electronic Resource
    Electronic Resource
    Dislocation distribution near the crack tip of I and II modes in bulk aluminum single crystal (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 203-206 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dislocation distribution near the crack tip of I and II modes in bulk aluminum single crystal has been decorated by using the etching pit technique and then was observed by scanning electron microscopy. It has been shown that two kinds of distribution of dislocations, i.e., shielding and antishielding dislocations are found to exist near the crack tip. In addition to these, the dislocation-free zone is still observed to be between the crack tip and the plastic zone. According to Rice and Thomson [Philos. Mag. 29, 73 (1974)], the dislocation mode of the elastic-plastic crack is extended to include the antishielding dislocations as part of a crack-tip equilibrium configuration, which may be described as follows: (μb/2π) (∫−e−a+∫−c−s +∫sc+∫ae)[ f(x')/(x−x')]dx'+σa=0, when ||x||〈C, or σf, when c〈||x||〈s and e〈||x||〈a. The factors affecting the dislocation distribution are discussed in detail.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347751
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  • 8
    Electronic Resource
    Electronic Resource
    Measurements of the ac susceptibility and the spontaneous resistive anisotropy in dilute P(underbar)d(underbar)Fe : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5674-5676 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of detailed measurements of the field and temperature dependent ac susceptibility (χac) and the spontaneous resistive anisotropy (SRA) of P(underbar)d(underbar)Fe samples with between 0.35 and 2.4 at. % Fe are summarized. The χac data enable estimates for the critical exponents γ, β, and δ to be made, and in the 1.4 at. % sample these are close to Heisenberg model predictions. In the other samples evidence is found for exchange bond disorder. The SRA results are consistent with this transport coefficient exhibiting critical behavior governed by percolationlike behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353587
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  • 9
    Electronic Resource
    Electronic Resource
    Laser ionization spectroscopy of CD3 via the 3pz 2A‘2 Rydberg state (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 60-67 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Nascent CD3 radicals produced by photodissociation of CD3I after absorption of 266 nm radiation by the A˜ state are studied using the photofragment imaging technique. Two-photon, resonance-enhanced, multiphoton ionization [(2+1) REMPI] probes CD3 via the 3pz 2A'2 Rydberg excited electronic state. CD3I photodissociation at 266 nm is found to produce ground-electronic-state CD3 radicals with substantial vibrational excitation of the ν2 umbrella mode. Rotational constants are determined for v=0, 1, and 2 of ν2 in the 3pz excited state by analysis of the spectra. A first-order perturbation and diagonalization procedure is used to generate potential energy curves for the umbrella mode in both the ground and excited electronic states and Franck–Condon factors for various transitions between the states. These results should prove useful when employing REMPI to characterize methyl radicals in many environments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456466
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  • 10
    Electronic Resource
    Electronic Resource
    Bond-orientational order in liquid Si (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 3896-3900 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We study bond-orientational order in liquid Si via Monte Carlo simulation in conjunction with empirical two- and three-body potentials of the form proposed by Stillinger and Weber. Bond-orientational order (BOO) is described in terms of combinations of spherical harmonic functions. Liquid Si is found to have pronounced short-range BOO corresponding to l=3, as expected for a structure with local tetrahedral order. No long-range BOO is found either in the equilibrium or the supercooled liquid. When the three-body potential is artificially removed, the tetrahedral bond-orientation order disappears and the liquid assumes a close-packed structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.460665
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