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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 954-957 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new model of "new donors'' is presented, based on electrical, infrared measurements, transmission electron microscopy, and high-resolution electron microscopy observations on Czochralski-grown silicon single crystals containing "new donors.'' In this model, the electrical activity of "new donors'' originates from the uncoordinated Si dangling bonds on small dislocation loops resulting from oxygen precipitation. In comparison with other models, the present model can better explain the experimental results of the heat treatment Czochralski-grown Si wafers.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2048-2050 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of growth temperature on the optical properties of self-assembled In0.65Al0.35As/Al0.35Ga0.65As quantum dots is studied using photoluminescence and electroluminescence spectra. With the growth temperature increasing from 530 to 560 °C, the improvement of optical and structural quality has been observed. Furthermore, edge-emitting laser diodes with three stacked InAlAs quantum dot layers grown at different temperature are processed, respectively. For samples with quantum dots grown at 560 °C, the continuous wave operation is obtained up to 220 K, which is much higher than that of ones with InAlAs islands grown at 530 °C and that of the short-wavelength quantum-dot laser previously reported. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical model is proposed to understand backgating in GaAs metal–semiconductor field-effect transistors (MESFETs), in which the effect of channel–substrate (CS) junction is included. We have found that the limitation of CS junction to leakage current will cause backgate voltage to apply directly to CS junction and result in a threshold behavior in backgating effect. A new and valuable expression for the threshold voltage has been obtained. The corresponding threshold electric field is estimated to be in the range of 1000–4000 V/cm and for the first time is in good agreement with reported experimental data. More, the eliminated backgating effect in MESFETs that are fabricated on the GaAs epitaxial layer grown at low temperature is well explained by our theory. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 43-45 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfaces between Si(100) and LaSi2−x lattices formed by rapid thermal annealing at ∼900 °C for 10 s have been studied using high-resolution transmission electron microscopy. The experimental results show that the C axis of the LaSi2−x unit cell points to the 〈332〉Si direction. A model suggesting the {100} planes of LaSi2−x grown on a {113}Si surface has been put forward to account for the observed tilting growth of LaSi2−x disilicide on the Si(100) surface.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1695-1697 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strong in-plane optical anisotropy of (001) semi-insulating GaAs, which comes from the submicron region under the surface, has been observed by reflectance difference spectroscopy. The optical anisotropy can be explained by the anisotropic strain that is introduced by the asymmetric distribution of 60° dislocations during surface polishing. The simulated spectra reproduce the line shape of the experimental ones. The simulations show that the anisotropic strain is typically about 2.3×10−4. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Publication Date: 2013-07-24
    Description: The dynamics of soil organic carbon (SOC) pools determine potential carbon sequestration and soil nutrient improvement. This study investigated the characteristics of SOC pools in five types of cultivated topsoils (0–15 cm) in subtropical China using laboratory incubation experiments under aerobic conditions. The sizes and turnover rates of the active, slow and resistant C pools were simulated using a first-order kinetic model. The relative influence of soil environmental properties on the dynamics of different SOC pools was evaluated by applying principal component analysis (PCA) and aggregated boosted trees (ABTs) analysis. The results show that there were significantly greater sizes of different SOC pools and lower turnover rates of slow C pool in two types of paddy soils than in upland soils. Land use exerted the most significant influence on the sizes of all SOC pools, followed by clay content and soil pH. The soil C/N ratio and pH were the major determinants for turnover rates of the active and slow C pools, followed by clay content which had more impact on the turnover rates of the active C pool than the slow C pool. It is concluded that soil type exerts a significant impact on the dynamics of SOC.
    Print ISSN: 0266-0032
    Electronic ISSN: 1475-2743
    Topics: Geosciences , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Published by Wiley-Blackwell
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