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Optical properties of InAs self-organized quantum dots in n–i–p–i GaAs superlattices (2000)

Wang, J. Z. ; Wang, Z. M. ; Wang, Z. G.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 76 (2000), S. 2035-2037

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The optical properties of InAs quantum dots in n–i–p–i GaAs superlattices are investigated by photoluminescence (PL) characterization. We have observed an anomalously large blueshift of the PL peak and increase of the PL linewidth with increasing excitation intensity, much smaller PL intensity decrease, and faster PL peak redshift with increasing temperature as compared to conventional InAs quantum dots embedded in intrinsic GaAs barriers. The observed phenomena can all be attributed to the filling effects of the spatially separated photogenerated carriers. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.126246

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