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  • 1
    Online Resource
    Online Resource
    Dordrecht :Springer Netherlands,
    Keywords: Plant tissue culture. ; Plant biotechnology. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (469 pages)
    Edition: 1st ed.
    ISBN: 9781402036941
    Series Statement: Focus on Biotechnology Series ; v.6
    DDC: 571.5382
    Language: English
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  • 2
    Online Resource
    Online Resource
    Berlin, Heidelberg :Springer Berlin / Heidelberg,
    Keywords: Units of measurement. ; Units of measurement--History. ; Units of measurement History. ; Electronic books.
    Description / Table of Contents: This book provides comprehensive coverage of the units in physics and engineering and the international system of units. It serves as a useful reference to researchers and engineers.
    Type of Medium: Online Resource
    Pages: 1 online resource (169 pages)
    Edition: 1st ed.
    ISBN: 9783642007385
    Series Statement: Springer Series in Materials Science Series ; v.122
    DDC: 530.81
    Language: English
    Note: Intro -- Units of Measurement -- 1 Metrology Through Ages -- 1.1 Introduction -- 1.2 History of Metrology in India -- 1.2.1 Legal Metrology -- 1.2.2 Town Planning -- 1.2.3 Length Measurements -- 1.2.4 Time Measurements -- Time Intervals -- Sidereal Metrics -- Smaller Units of Time Used in the Vedas -- Lunar Metrics -- Tropical Metrics -- Reckoning of Time Among Other Entities -- Counting of Time -- Time Scale in Seconds -- 1.2.5 Units of Time and Angle -- 1.2.6 Mass Measurement -- For Trade in Food Grains and Similar Items -- For Gold Trade -- For Silver Trade -- 1.2.7 Volume Measurements -- 1.2.8 Numeration -- References -- Further Readings -- 2 System of Quantities and Units -- 2.1 Quantities -- 2.2 System of Quantities -- 2.2.1 Quantity -- 2.2.2 Base Quantity -- 2.2.3 System of Base Quantities -- 2.2.4 Derived Quantity -- 2.2.5 Quantity Equation -- 2.3 Measurement Unit -- 2.3.1 System of Measurement Units -- 2.3.2 System of Base Units -- Properties of Base Units -- Minimum Number of Base Units -- 2.3.3 Derived Unit -- 2.3.4 Unit Equation -- 2.3.5 Properties of Units of Measurement -- 2.3.6 Coherent Derived Unit -- 2.4 Quantity of Dimension 1 or Dimensionless Quantity -- 2.4.1 Dimension of a Quantity -- 2.4.2 Quantities of Dimension 1 or Dimensionless Quantities -- 2.4.3 Ordinal Quantity -- 2.4.4 Quantity Scale, Measurement Scale -- 2.4.5 Ordinal Quantity Scale, Ordinal Scale -- 2.4.6 Nominal Property -- 2.5 Conversion Factor Between Units -- 2.6 Quantity Relations -- 2.6.1 Quantity Value -- 2.6.2 Numerical Quantity Value -- 2.6.3 Quantity Calculus -- 2.7 Units Used in Biology Biochemistry, Molecular Biology, Forensic Science for Biological Effects -- 2.7.1 Photochemical or Photo-biological Quantitiesand Their Units -- 2.8 Units Used in Photometry -- 2.8.1 Photometry -- 2.8.2 Actinic Action Spectrum -- 2.8.3 Types of Visions. , 2.9 Unit in the Field of Sound -- 2.10 Units in the Field of Ionizing Radiations -- 2.11 SI Units in the Framework of General Relativity -- References -- 3 Various Systems of Units -- 3.1 Introduction -- 3.2 Relations Between the Quantities -- 3.2.1 Derived Quantities by Definition -- 3.2.2 Derived Quantities by a Phenomenon -- 3.3 Three-Dimensional Systems of Units -- 3.3.1 Gauss System -- 3.3.2 CGS System -- 3.3.3 FPS System -- 3.4 Four-Dimensional Systems of Units -- 3.4.1 Giorgi System -- 3.4.2 Maxwell System -- 3.4.3 Hartree System -- 3.4.4 Units for Atomic and Molecular Measurements -- 3.4.5 McWeeny System -- 3.4.6 Ohm, Ampere, Second and Metre System -- 3.4.7 Force, Length and Time System -- 3.4.8 System in Terms of Universal Constants (G, H, E and Q) -- 3.4.9 System in Terms of Electric Charge, Flux,Length and Time -- 3.4.10 System in Terms of L, M, T and R -- 3.5 Derived Quantities in Terms of L, M, T and R: An Example -- References -- 4 Metre Convention and Evolution of Base Units -- 4.1 BIPM and Metre Convention -- 4.1.1 General Conference on Weights and Measures (CGPM) -- 4.1.2 International Committee for Weightsand Measures (CIPM) -- 4.1.3 Consultative Committees -- Consultative Committee for Electricity and Magnetism (CCEM) -- Consultative Committee for Photometry and Radiometry (CCPR) -- Consultative Committee for Thermometry (CCT) -- Consultative Committee for Length (CCL) -- Consultative Committee for Time and Frequency (CCTF) -- Consultative Committee for Ionizing Radiation (CCRI) -- Consultative Committee for Units (CCU) -- Consultative Committee for Mass and Related Quantities (CCM) -- Consultative Committee for Amount of Substance: Metrology in Chemistry (CCQM) -- Consultative Committee for Acoustics, Ultrasound and Vibration(CCAUV) -- 4.1.4 International Bureau of Weights and Measures (BIPM) -- Scientific Activities. , Objects of BIPM -- Staff at BIPM -- Publications -- Metrologia -- 4.1.5 Linkages of Various Organs of Metre Convention -- 4.2 International System of Units (SI) -- 4.2.1 Base Units -- 4.3 Evolution of Base Units -- 4.3.1 Unit of Length -- 4.3.2 Unit of Mass -- International Prototype of Kilogram -- 4.3.3 Unit of Time -- 4.3.4 Unit of Electric Current -- 4.3.5 Unit of Luminous Intensity -- 4.3.6 Unit of Temperature -- Unit of Thermodynamic Temperature (Kelvin) -- 4.3.7 Unit of Amount of Substance (Mole) -- 4.3.8 Dependence of Base Units -- References -- 5 Realization of Base Units -- 5.1 The Metre -- 5.1.1 Standard Radiations -- 5.2 The Kilogram -- 5.2.1 Method of Cleaning -- Cleaning with Chamois Leather -- Cleaning with Steam -- Efficacy of the Cleaning Procedure -- 5.2.2 Uncertainty in National Standards -- 5.3 The Second -- 5.4 The Ampere -- 5.4.1 Josephson and Klitzing Constants -- 5.4.2 Values of Josephson and Klitzing Constants -- 5.5 The Candela -- 5.6 The Kelvin -- 5.6.1 Triple Point of Water -- 5.6.2 Temperature Scales -- 5.6.3 ITS-90 -- Defining Fixed Points on ITS-90 -- ITS-90 and PLTS-2000 -- Defining Fixed Points on PLTS-2000 -- 5.7 The Mole -- References -- 6 Derived Quantities and Their Units -- 6.1 Derived Quantities -- 6.2 Units of Derived Quantities -- 6.3 SI Derived Units -- 6.3.1 Units Expressed in Terms of Base Units -- 6.3.2 Derived Units with Special Names -- 6.3.3 Derived Units Formed from the Derived Units with Special Names -- 6.3.4 Derived Quantities of Dimension 1 -- 6.4 Units Outside the SI -- 6.4.1 Units Accepted for Use with the SI -- 6.4.2 Non-SI Units with Experimentally Obtained Values -- 6.4.3 Non-SI Units Used by Special Groups -- 6.4.4 Other Non-SI Units with Special Names -- 6.4.5 Other Non-SI Units Found in the Old Literature -- References -- 7 Expressing SI Units -- 7.1 Introduction -- 7.2 SI Prefixes. , 7.2.1 Rules for Using SI Prefixes -- 7.2.2 Prefix About the Kilogram -- 7.3 Writing of SI Unit Symbols -- 7.3.1 Unit Symbols and Their Combinations -- 7.3.2 Names of Units -- 7.3.3 Quantity Calculus -- Value of Quantity -- Numerical Value of a Given Quantity -- Formatting the Value of a Quantity -- Symbols of Quantities -- Quantity Symbols and Unit Symbols -- 7.3.4 Stating Values of Quantities of Dimension 1 -- Use of Symbol % -- 7.4 Expression of Numbers -- 7.4.1 Formatting Numbers, and the Decimal Marker -- 7.4.2 Expressing the Measurement Uncertainty -- 7.5 Advantages of SI Units -- 7.5.1 Harmonization of Units -- General Principle -- 7.5.2 Expressing the Values of o and o in Terms of SI Units -- 7.5.3 Expressing Electrostatic and ElectromagneticQuantities in SI Units -- Charge and Current -- Potential -- Electrical Resistance -- Electrical Capacitance -- emu of Magnetic Flux -- Magnetic field Strength (Flux Density) -- Electric field -- Inductance -- 7.5.4 SI Units of Quantities in Magnetic Field -- SI Unit of Magnetic Pole Strength -- Magnetic Flux Density/Magnetizing Force -- Intensity of Magnetization -- 7.5.5 Homogenizing of Units of Energy in Heat -- 7.5.6 Coherent System -- Coherent Derived Unit -- 7.5.7 Well-Defined Units -- References -- 8 Future Definitions of SI Units -- 8.1 In Terms of Physical Constants -- 8.1.1 Basis of SI Units -- 8.2 From Single Source -- 8.2.1 In Terms of Hydrogen Atom -- 8.2.2 In Terms of Only One Standard (Frequency) -- 8.2.3 In Terms of Fundamental Constants UsingMaxwell Equations -- 8.2.4 A Consistent Set of Fundamental Constants by BIPM -- 8.3 CIPM Recommendation 1 (CI-2005) -- 8.4 A Proposal to Redefine Kilogram, Ampere, Kelvin and Mole -- 8.4.1 Kilogram -- 8.4.2 Ampere -- 8.4.3 Kelvin -- 8.4.4 Mole -- 8.5 The Values of h, e, k and NA -- 8.5.1 Observations -- 8.6 Practical Standards to Realize Kilogram. , 8.6.1 Other Methods of Redefining Kilogram -- 8.6.2 Conclusion in Regard to the Kilogram -- 8.6.3 Measurement Standards -- Embodiment of Units of Measurements -- References -- 9 Scientists Associated with Units of Measurements -- 9.1 Scientists Associated with Base Units -- 9.1.1 Lord Kelvin -- 9.1.2 Anders Celsius -- 9.1.3 Andre Marie Ampere -- 9.2 Scientists Associated with Derived Units -- 9.2.1 Sir Isaac Newton -- 9.2.2 Heinrich Rudolf Hertz -- 9.2.3 Blaise Pascal -- 9.2.4 James Prescott Joule -- 9.2.5 James Watt -- 9.2.6 Charles Augustin Coulomb -- 9.2.7 Alessandro Volta -- 9.2.8 Michael Faraday -- 9.2.9 Wilhelm Eduard Weber -- 9.2.10 Nickola Tesla -- 9.2.11 Joseph Henry -- 9.2.12 Antoine Henri Becquerel -- 9.2.13 Louis Harold Gray -- 9.2.14 Rolf M. Sievert -- Sievert Chamber -- 9.2.15 Georg Simon Ohm -- 9.2.16 Werner von Siemens -- 9.3 Some Units Not Named After Any Scientist -- Appendix A: National Physical laboratory -- A.1 Metre -- A.2 Kilogram -- A.3 Second -- A.4 Ampere -- A.5 Kelvin -- A.6 Candela -- A.7 Mole -- A.8 Radiation -- References -- Index.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3219-3225 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the narrowest half-width at half-maximum photoluminescence linewidth of 2.8 meV, in 40-period lattice-matched In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells, grown by molecular-beam epitaxy with growth interruption. A simple analysis of the linewidth suggests that the structure has near perfect interfaces. Temperature-dependent photoluminescence linewidth data indicate impurity incorporation due to the growth interruption. However, the high quality of the multiple quantum well is not impaired as is seen in the room-temperature absorption data, where excitonic features up to n=3 sublevel are clearly seen. Carrier lifetime in this multiple-quantum-well system has been measured, we believe for the first time, using the picosecond photoluminescence correlation technique. A lifetime of 860 ps is obtained, which is similar to the value obtained for high-quality GaAs/AlGaAs and In0.53Ga0.47As/InP quantum wells. This further confirms the high quality obtained in this ternary material system using growth interruption.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5564-5566 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Differential Hall measurements at 77 K were done on 150-keV boron implanted p-type mercury-cadmium-telluride (HgCdTe). n+ layers formed as a result of implantation with various doses were very sharp and thicknesses of the n+ layers were found to depend on boron dose. The sheet carrier concentration tends to saturate above the dose 1×1013 cm−2.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3866-3870 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: During electrical conductivity measurements using balloon-borne probes, the gondola was observed to acquire an electrical potential of the order of a few tens of volts. Such an effect was found to occur mainly during balloon ascent and also to a lesser extent during balloon float and descent periods. A technique has been developed at the Physical Research Laboratory (Ahmedabad, India) for the direct measurement of potential acquired by the gondola during the course of its flight. Such measurement has relevance when we interpret the data obtained from the balloon-borne conductivity and electric field probes.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1543-1545 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Femtosecond time-resolved reflectivity and photoconductive switching measurements have been made of In0.52Al0.48As grown by molecular beam epitaxy on (100) InP substrates at growth temperatures ranging from 150 to 480 °C. A response/switching time of ∼400 fs is measured in the sample grown at 150 °C. Temperature-dependent measurements shed light on the nature of the material producing the ultrafast response.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2065-2069 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An electronic circuit has been developed to study the pulse I–V characteristics of superconductors. A special feature of the circuit is its low rms noise voltage of less than 10 nV, which allows measurements over a broad voltage range of 50 nV to 500 mV for the first time. In order to overcome the limitations of a four probe technique at high common mode voltages, a novel five probe geometry is developed. The measurements on single crystals of the Bi2Sr2CaCu2Ox superconductor are carried out to demonstrate the circuit performance.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3276-3278 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures is observed to have a significantly shorter carrier lifetime than GaAs grown at normal substrate temperatures. Using femtosecond time-resolved-reflectance techniques, a sub-picosecond (〈0.4 ps) carrier lifetime has been measured for GaAs grown by MBE at ∼200°C and annealed at 600 °C. With the same material as a photoconductive switch we have measured electrical pulses with a full-width at half-maximum of 0.6 ps using the technique of electro-optic sampling. Good responsivity for a photoconductive switch is observed, corresponding to a mobility of the photoexcited carriers of ∼120–150 cm2/V s. GaAs grown by MBE at 200 °C and annealed at 600 °C is also semi-insulating, which results in a low dark current in the switch application. The combination of fast recombination lifetime, high carrier mobility, and high resistivity makes this material ideal for a number of subpicosecond photoconductive applications.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 522-524 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin Y2O3 films have been fabricated using a Langmuir–Blodgett (LB) process. Uniform LB films of yttrium arachidate have been successfully deposited up to 200 layers. These films were found to decompose uniformly above 300 °C leaving a thin oxide layer. X-ray diffraction, laser reflection, and Rutherford backscattering have been used to determine crystal structure and stoichiometry of the film before, during, and after thermal decomposition. This test system demonstrates the potential application of Langmuir–Blodgett deposition for inorganic oxide film fabrication of thicknesses ranging from 0.1 to 40 nm.
    Type of Medium: Electronic Resource
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