GLORIA — GEOMAR Library Ocean Research Information Access

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

The effect of coimplantation on the electrical activity of implanted carbon in GaAs (1993)

Moll, A. J. ; Ager, J. W. ; Yu, Kin Man ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 74 (1993), S. 7118-7123

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The effects of radiation damage and stoichiometry on the electrical activity of carbon implanted in GaAs are studied. Damage due to implantation of an ion heavier than C increases the number of C atoms which substitute for As (CAs). Creation of an amorphous layer by implantation and the subsequent solid phase epitaxy during annealing further enhances the concentration of CAs. However, the free carrier concentration does not increase linearly with increasing concentration of CAs due to compensating defects. Activation of implanted C is maximized by maintaining the stoichiometry of the substrate which reduces the number of compensating defects in the crystal. Under optimum conditions for carbon implanted at a dose of 5×1014 cm−2, the carbon acceptor activity can be increased from 2% to 65% of the total implanted carbon.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.355027

	Location	Call Number	Limitation	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit