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SiGe resonant tunneling hot-carrier transistor (1990)

Rhee, S. S. ; Chang, G. K. ; Carns, T. K. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 56 (1990), S. 1061-1063

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Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A SiGe three-terminal hot-hole transistor using a double-barrier resonant tunneling structure as an emitter is fabricated. Injected carriers from the emitter are transferred near-ballistically into the collector through a thin base. The demonstrated main feature of the device is a controllable negative differential resistance in the collector current. Utilizing the high-speed characteristics of the tunneling process and negative differential resistance, integration of the device into Si technology could find applications in the areas of high-speed digital circuits, frequency multipliers, and tunable oscillators/amplifiers.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.102565

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