Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 840-841
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A diamond p-n junction diode fabricated by the chemical vapor deposition technique, shows distinct rectification characteristics. From the electron beam induced current measurement, the existence of a depletion region or a space-charge region around the interface between the n- and p-type semiconducting diamond layers was identified.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104506
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