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Dislocation generation mechanisms for GaP on Si grown by metalorganic chemical vapor deposition (1993)

Soga, Tetsuo ; Jimbo, Takashi ; Umeno, Masayoshi

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 63 (1993), S. 2543-2545

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Dislocation generation mechanisms for GaP on Si substrates by metalorganic chemical vapor deposition are described. Dislocations are not observed at the GaP/Si interface when the layer thickness is less than 90 nm. The presented high resolution transmission electron microscopy shows two kinds of dislocations with the extra-half plane in the GaP layer and Si substrate. These observations predict that the misfit dislocations are formed at the growth temperature while the dislocations with the extra-half plane in the GaP layer are formed during the cooling process, owing to the difference of the thermal expansion.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.110427

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