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Direct evidence of carbon precipitates in GaAs and InP (1994)

Moll, A. J. ; Haller, E. E. ; Ager, J. W. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 65 (1994), S. 1145-1147

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Raman spectra of carbon-doped GaAs and InP show two peaks which are characteristic of C clusters with sp2 bonding. The peaks are seen in C-implanted GaAs and InP following either rapid thermal annealing or furnace annealing. The peaks are also seen in heavily doped epilayers following furnace annealing. Various mechanisms for C precipitation are discussed. Experimental evidence suggests that the loss of the group V component at the surface during annealing may play a role in the precipitation of C.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.112123

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