Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 1555-1557
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report a photoluminescence study of SiGe quantum dots formed by one, two, and five periods of Si[8 monolayer (ML)]/Ge(4 ML) superlattices. The peak of photoluminescence from one Ge layer is at 0.95 eV, but the one from two and five periods of superlattices jump to about 1.2 eV. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.119964
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