Publication Date:
2014-12-13
Description:
Publication date: February 2015 Source: Vacuum, Volume 112 Author(s): Bing Ren , Lin Wang , Jian Huang , Ke Tang , Yimin Yang , Linjun Wang We report the semiconducting behavior at room temperature and a metal-semiconductor transition (MST) at lower temperature in copper sulfides (Cu x S) thin films. Cu x S thin films, deposited by direct magnetron sputtering technique, are found to be of CuS-Cu 1.8 S mixed phase by XRD. The deposited films exhibit low electrical resistivity close to ∼10 −4 Ω cm at room temperature and free-carrier absorption in the near infrared (NIR) region due to excess holes in the valence band. Temperature dependent resistivity measurements show the MST at ∼260 K, to the best of our knowledge, for the first time. The temperature dependent metal-semiconductor transition is attributed to the phase transition from Cu 1.8 S to CuS at T c during the cooling process. This work could help give insight into the transport characteristics as well as phase transition at lower temperature in copper sulfides thin films.
Print ISSN:
0042-207X
Electronic ISSN:
1879-2715
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
