In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 717-720 ( 2012-5), p. 1017-1020
Kurzfassung:
This paper demonstrates the reliability of SiC vertical trench junction field-effect transistors (VJFET). Measurements are shown which prove that the device’s intrinsic gate-source pn junction is immune to degradation associated with recombination-enhanced dislocation glide. And after subjecting VJFETs to 1,000 hours of high-temperature bias stress, no measured parameter deviated from datasheet specifications. These results reflect the maturity and reliability of SemiSouth’s SiC VJFET technology, as well as tight process control over device parameters that are critical to circuit design and long-term system operation.
Materialart:
Online-Ressource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.717-720
DOI:
10.4028/www.scientific.net/MSF.717-720.1017
Sprache:
Unbekannt
Verlag:
Trans Tech Publications, Ltd.
Publikationsdatum:
2012
ZDB Id:
2047372-2