In:
Journal of Applied Physics, AIP Publishing, Vol. 105, No. 6 ( 2009-03-15)
Kurzfassung:
We report the temperature dependence of photoluminescence (PL) spectra for InN. For a free-carrier concentration n=5.9×1017 cm−3 and low temperature, the main PL band is observed at 0.669 eV. The PL shift and broadening are described from 20 to 300 K based on electron-phonon interactions. Two discrete phonon sidebands (PSBs) are observed with corresponding phonon energy of ∼69 meV. The PSB temperature shift and linewidth broadening are well described by previous theory.
Materialart:
Online-Ressource
ISSN:
0021-8979
,
1089-7550
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2009
ZDB Id:
220641-9
ZDB Id:
3112-4
ZDB Id:
1476463-5