Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
62 (1987), S. 961-966
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
NbN epitaxial growth on an ultrathin MgO/semiconductor system was carried out by reactive sputtering. It was revealed that (100)-oriented NbN epitaxy was achieved on a (100)-oriented Si substrate by introducing a MgO buffer layer as thin as 5 A(ring) at the interface. An interrupt-sputtering technique was newly conducted to obtain the epitaxial films, which were intermittently deposited by rf sputtering. A metal-insulator-semiconductor tunneling Schottky diode with epitaxial NbN was prepared using this technique, and evaluated in its current-voltage characteristics. Our study indicated that the NbN epitaxy mechansim can be explained by its growth on a (100) naturally oriented 5-A(ring) MgO layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339708
|
Location |
Call Number |
Limitation |
Availability |
