GLORIA

GEOMAR Library Ocean Research Information Access

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Online Resource
    Online Resource
    Recent progress of biochemical and biomedical engineering in Japan; 1: Recent progress of biochemical and biomedical engineering in Japan I (2004)
    Berlin : Springer
    Associated volumes
    Details Availability
    Keywords: Biochemical engineering. ; Medicine. ; Biotechnology. ; Biochemistry. ; Biomedical engineering.
    Description / Table of Contents: 1. E.Y. Park: Recent Progress in Microbial Cultivation Techniques -- 2. M. Taniguchi, T. Tanaka: Clarification of Interactions Among Microorganisms and Development of Co-culture System for Production of Useful Substances -- 3. N. Nishio, Y. Nakashimada: High Rate Production of Hydrogen/Methane from Various Substrates and Wastes -- 4. K. Miyake, S. Iikima: Bacterial Capsular Polysaccharide and Sugar Transferases -- 5. T. Ohshima, M. Sato: Bacterial Sterilization and Intracellular Protein Release by Pulsed Electric Field -- 6. H. Nakano, Y. Kawarasaki, T. Yamane: Cell-free Protein Synthesis Systems: Increasing their Performance and Applications -- 7. Y. Iwasaki, T. Yamane: Enzymatic Synthesis of Structured Lipids -- 8. K.-I. Suehara, T. Yano: Bioprocess Monitoring Using Near-Infrared Spectroscopy.
    Type of Medium: Online Resource
    Pages: Online-Ressource
    ISBN: 9783540397359
    Series Statement: Advances in Biochemical Engineering/Biotechnology 90
    URL: http://link.springer.com/book/10.1007/b14089
    URL: https://doi.org/10.1007/b14089
    DOI: 10.1007/b14089
    Language: English
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    GEOMAR CATALOGUE
    Link to Library Catalog
    get availability status
  • 2
    Online Resource
    Online Resource
    Recent progress of biochemical and biomedical engineering in Japan II; 2: Recent progress of biochemical and biomedical engineering in Japan II (2004)
    Berlin : Springer
    Associated volumes
    Details Availability
    Keywords: Biochemical engineering. ; Medicine. ; Biotechnology. ; Biochemistry. ; Biomedical engineering.
    Description / Table of Contents: 1. K. Shimizu: Metabolic Flux Analysis Based on 13C Labeling Experiments and Integration of the Information with Gene and Protein Expression Patterns -- 2. T. Hanai, H. Honda: Application of Knowledge Information Processing Methods to Biochemical Engineering, Biomedical and Bioinformatics Field -- 3. N. Uozumi: Large Scale Production of Hairy Root -- 4. H. Honda: Large-Scale Micropropagation System of Plant Cells -- 5. M. Kino-oka, M. Taya: Development of Culture Techniques of Keratinocytes for Skin Graft Production -- 6. M. Kamihira, K.-I. Nishijima, S. Iijima: Transgenic Avian for the Production of Recombinant Proteins -- 7. M. Shinkai, A. Ito: Functional Magnetic Particles for Medical Application.
    Type of Medium: Online Resource
    Pages: Online-Ressource
    ISBN: 9783540398769
    Series Statement: Advances in Biochemical Engineering/Biotechnology 91
    URL: http://link.springer.com/book/10.1007/b14093
    URL: https://doi.org/10.1007/b14093
    DOI: 10.1007/b14093
    Language: English
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    GEOMAR CATALOGUE
    Link to Library Catalog
    get availability status
  • 3
    Electronic Resource
    Electronic Resource
    Analytical studies on multiple delta doping in diamond thin films for efficient hole excitation and conductivity enhancement (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1977-1979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Beneficial features of boron multiple delta doping (MDD) in synthetic diamond thin films are studied analytically and compared with MDD in GaAs. In spite of a deep boron level (∼0.3 eV), MDD greatly helps the thermal excitation of holes via elevation of the Fermi level toward the acceptor boron level. Thus, a hole excitation 6–7 times higher than that of the uniformly doped one is obtained. Furthermore, more than 90% of holes are in the spacer layer (i-diamond) where the mobility is high, resulting in a film conductance of the MDD structure more than 20 times higher than that of the conventional one when the same amount of boron is uniformly doped.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357661
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Growth and characterization of epitaxial SrTiO3 thin films with prominent polarizability (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5295-5301 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial SrTiO3 (STO) thin films were grown successfully by rf reactive magnetron sputtering on (111)Pt/(100)MgO substrates. At present, the dielectric constant of the STO film (110 nm thick) has reached 370ε0 at room temperature. Despite the general difficulty of obtaining a high dielectric constant for the ultrathin STO films, a fairly thin STO film of 39 nm showed a large value of 240ε0. The existence of an STO degraded layer at the interface was suggested by the Fourier transform infrared spectrum observed for the ultrathin STO film of 3.5 nm. The interfacial layer with poor quality diminishes the mean dielectric constant of the STO thin films. This interfacial layer effect offers an explanation for the difficulty in obtaining a high dielectric constant of the ultrathin STO films. Moreover, the band diagram of a Cr/STO/Pt metal-insulator-other metal structure is discussed. Compared to the experimental results, a space-charge-free band diagram was concluded to be appropriate and was consistent with the observed Schottky-like leakage current and the inverse proportionality of the capacitance and the STO thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355730
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Mobility minima in field-inversion gel electrophoresis (1990)
    s.l. : American Chemical Society
    Macromolecules 23 (1990), S. 4480-4481 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00222a025
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Characterization of SrRuO3 thin film grown by laser ablation at temperatures above 400 °C (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 162-166 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural and electrical properties of SrRuO3 thin films grown at various temperatures (Td) were investigated. The films grew epitaxially when Td[greater, double equals]350 °C. The dependences of crystallinity, conductivity, and carrier density on temperature were less pronounced when Td was above 400 °C, whereas crystallinity and conductivity were markedly degraded with decreasing Td when Td[less, double equals]400 °C. Owing to this unique dependence, SrRuO3 thin film deposited at Td as low as 400 °C showed an acceptable quality for application to electronic devices. For the SrRuO3/SrTiO3/SrRuO3 trilayered capacitor structure, when the top SrRuO3 layer was grown at 400 °C, a symmetric permittivity–voltage curve was observed and the SrRuO3 permittivity value of 340 ε0 was obtained. When the top SrRuO3 layer was grown at 600 °C, the permittivity value of SrTiO3 decreased and even a slight asymmetry of the permittivity–voltage curve could ever be observed. This indicates that the lower temperature deposition of SrRuO3 thin film causes less interface degradation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319323
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Estimation of trap levels in SrTiO3 epitaxial films from measurement of (LaSr)MnO3/SrTiO3/(LaSr)TiO3 p-i-n diode characteristics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 187-191 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have explored electrical trap levels inside SrTiO3 epitaxial films grown by the pulsed laser deposition method from electrical measurements of semiconducting oxide p-i-n diodes consisting of La0.85Sr0.15MnO3/SrTiO3/La0.05Sr0.95TiO3 trilayers. The prepared p-i-n diodes exhibited a marked temperature dependence in their current–voltage (I–V) characteristics. By attributing the temperature dependence of I–V curves to the space-charge limitation due to the trapped charges inside the i-SrTiO3 layer, we estimated crudely the level of the dominant trap in the SrTiO3 layer as ∼0.09 eV. The trap density was also estimated from the curve-fitting technique. At this moment, the trap densities were 1016 and 1018/cm3 when SrTiO3 layers were grown at 650 and 630 °C, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1334638
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial growth of NbN on an ultrathin MgO/semiconductor system (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 961-966 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: NbN epitaxial growth on an ultrathin MgO/semiconductor system was carried out by reactive sputtering. It was revealed that (100)-oriented NbN epitaxy was achieved on a (100)-oriented Si substrate by introducing a MgO buffer layer as thin as 5 A(ring) at the interface. An interrupt-sputtering technique was newly conducted to obtain the epitaxial films, which were intermittently deposited by rf sputtering. A metal-insulator-semiconductor tunneling Schottky diode with epitaxial NbN was prepared using this technique, and evaluated in its current-voltage characteristics. Our study indicated that the NbN epitaxy mechansim can be explained by its growth on a (100) naturally oriented 5-A(ring) MgO layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339708
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Growth and characterization of new Bi14(Sr0.33Ca0.67)5O26 single crystals (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4373-4378 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New insulating Bi14(Sr0.33Ca0.67)5O26 layered single crystals have been grown by a flux method and their crystallographic properties have been characterized. The crystals exhibited a smooth cleaved surface perpendicular to [001] orientation. The x-ray precession camera analysis indicated the crystals have rhombohedral symmetry, belonging to a Laue group of 3¯m. Furthermore, some kinds of rare-earth elements have been successfully substituted for lattice sites of the crystal. The variation of the c-axis length reflected ionic radii of the rare-earth elements substituted. Radiant luminescence has been observed in visible and infrared regions in the Er-doped crystals, which was assigned to electron transition between spin-orbit levels of trivalent Er ions in the crystal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348361
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Excimer-laser ablation of RuO2 observed by a streak camera (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2402-2407 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the laser ablation of RuO2, the propagation of oxygen and ruthenium atoms in vacuum and in an oxygen ambient were investigated by observing the fluorescence from excited atoms in the plume using a framing streak camera. An analysis, which took into account the focusing depth of the camera, was introduced. In vacuum the spatial distributions of the oxygen and ruthenium atoms were found to be shifted Maxwellians. The flow velocity and thermal velocity remained almost unchanged for different laser energy densities, suggesting a thermal process during the interaction of laser pulse and target. The kinetic energies of 12 and 19 eV for oxygen and ruthenium atoms, respectively, were found. In the presence of an O2 ambient, atom propagation changed from a free expansion in vacuum to a collision-dominated one. The O2 molecules collide with the species present in the plasma, slowing down their velocities, and the velocities for different atoms equilibrate to almost the same value at a certain distance from the target and at a certain pressure of O2 ambient due to collisions between fast and slow atoms and exchanging of speeds. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369557
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...