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Resonant tunneling bipolar transistors using InAlAs/InGaAs heterostructures (1989)

Futatsugi, T. ; Yamaguchi, Y. ; Muto, S. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 65 (1989), S. 1771-1775

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Resonant tunneling bipolar transistors (RBTs) using InAlAs/InGaAs heterostructures were fabricated. These devices are bipolar transistors which use a resonant tunneling barrier as a minority-carrier injector. The RBT exhibits a collector current peak as a function of the base-emitter voltage at room temperature. The peak-to-valley ratio of the collector current is 3.5, and the peak collector current density is 5.7×104 A/cm2. The common-emitter current gain reaches a value of 24. These InAlAs/InGaAs RBTs characteristics are much better than those of AlGaAs/GaAs RBTs. We measured the microwave characteristics of the InAlAs/InGaAs RBT at room temperature, and obtained a cutoff frequency of 12.4 GHz. An equivalent circuit analysis and device simulation yielded an estimated resonant tunneling barrier response time of 1.4 ps.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.342929

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