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InAs/AlSb/GaSb single-barrier interband tunneling diodes with high peak-to-valley ratios at room temperature (1990)

Chen, J. F. ; Wu, M. C. ; Yang, L. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 68 (1990), S. 3040-3043

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We have fabricated an InAs/AlSb/GaSb single-barrier interband tunneling diode by molecular beam epitaxy. In this structure, a large tunneling current can be obtained by taking the advantage of the large heterojunction-conduction band to valence band overlap (0.15 eV) between InAs and GaSb which offers flexible designs of the AlSb barrier thickness and the doping concentrations. We have obtained a negative differential resistance with a peak-to-valley current ratio as high as 4.7 and a peak current density of 3.5 kA/cm2 at room temperature with a 1.5-nm-thick AlSb barrier. The current transport mechanism in this tunneling structure will be discussed according to the I-V characteristics as a function of temperature.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.346396

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