Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
68 (1990), S. 4286-4289
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Capacitance-voltage measurements were performed on the InAs/AlSb/GaSb interband tunneling diode at various frequencies. Theoretical analyses using a self-consistent Schrödinger–Poisson solver were found in agreement with the experimental results under the forward-bias condition. The quantization energy of each subband of the electron in the InAs accumulation region is used to predict the tunneling current cutoff voltage in agreement with that of the current-voltage measurements. Therefore, the cutoff of the interband tunneling process is mainly caused by the crossover of the electron subband energy in the InAs conduction band with respect to the valence band of the GaSb electrode due to the increased external bias voltage.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.346222
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