ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An experimental investigation is reported of optical transitions in narrow, symmetric, triangular well structures. Quantum wells as narrow as 2.5 nm have been grown in AlGaAs using an analog grading strategy in a conventional, solid source molecular beam epitaxy (MBE) system. Linearly graded heterostructures are analyzed in terms of Airy function solutions of the one-dimensional wave equation and energy levels more evenly spaced than in the equivalent square well are predicted. Transition energies obtained from photoluminescence, photoreflectance, and differential photoreflectance measurements agree well with calculated values. The differing spatial extents of wave functions in the triangular well case also modify the relative intensities of the lines identified, in particular the normally faint transition from n=3 heavy hole state to conduction-band ground state (hh3-e1) appears enhanced.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350928
